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Zakład Fizyki Jonów i Implantacji

Kierownik zakładu:

dr hab. Jerzy Żuk

Pracownicy:

Droździel Andrzej
Filiks Janusz
Krzyżanowska Halina
Kulik Mirosław
Prucnal Sławomir
Pyszniak Krzysztof
Turek Marcin

Główne kierunki badawcze:

Implantacja jonowa jest ważną metodą inżynierii materiałowej, umożliwiającą syntezę oraz modyfikację struktur półprzewodników i izolacyjnych, na przykład uzyskiwanie nanostruktur o ciekawych własnościach fizycznych. Unikalny w kraju implantator jonów UNIMAS o maksymalnej energii jonów 300 keV jest głównym urządzeniem Zakładu. Prowadzone są badania wtórnej emisji jonów oraz fotonów w trakcie oddziaływania wiązek jonowych z ciałem stałym. Pracownicy Zakładu zajmują się także poznawaniem własności optycznych struktur półprzewodnikowych, takich jak np. implantowany jonowo porowaty krzem, SiC i związki grupy A3-B5. W badaniach tych stosujemy techniki: elipsometrii, fotoluminescencji oraz modulacyjnej spektroskopii odbiciowej. Prowadzimy również symulacje komputerowe oddziaływania jonów oraz plazmy w związku z zastosowaniami w tokamakach.

Najważniejsze publikacje: Pokaż abstrakty


  1. M. Kulik,A. P. Kobzev,A. Misiuk,W. Wierzchowski,K. Wieteska,J. Bak-Misiuk, Composition and structure of czochralski silicon implanted with H+2 and annealed under enhanced hydrostatic pressure, Acta Physica Polonica A, 117(), 2010, 332-335

  2. S. Prucnal,L. Rebohle,W. Skoprupa, Blue electroluminescence of Ytterbium clusters in SiO2 by co-operative up-conversion, Applied Physics B: Lasers and Optics, 98(), 2010, 451-454

  3. S. Prucnal,M. Turek,A. Droździel,K. Pyszniak,S. Q. Zhou,A. Kanjilal,W. Skorupa,J. Żuk, Formation of InAs quantum dots in silicon by sequential ion implantation and flash lamp annealing, Applied Physics B: Lasers and Optics, 101(), 2010, 315-319

  4. S. Prucnal,M. Turek,A. Droździel,K. Pyszniak,A. Wójtowicz,S+Q. Zhou,A. Kanjilal,A. Shalimov,W. Skorupa,J. Żuk, Optical and microstructural properties of self-assembled InAs quantum structures in silicon, Central European Journal of Physics, DOI: 10.2478/s11534-010-0107-8(), 2010,

  5. S. Prucnal,L. Rebohle,W. Skorupa, Electroluminescence from Er and Yb co-doped silicon dioxide layers: The excitation mechanism, Journal of Non-Crystalline Solids, doi:10.1016/j.jnoncrysol.2010.12.002 (), 2010,

  6. O. Yastrubchak,J. Z. Domagala,J. Sadowski,M. Kulik,J. Żuk,A. L. Toth,R. Szymczak,T. Wosiński, Ion-implantation control of ferromagnetism in (Ga; Mn)As epitaxial layers, Journal of Electronic Materials, 39(), 2010, 794-798

  7. M. Majdan,S. Pikus,A. Gajowiak,A. Gładysz-Płaska,H. Krzyżanowska,J. Żuk,M. Bujacka,, Characterization of uranium(VI) sorption by organobentonite, Applied Surface Science, 256(), 2010, 5416-5421

  8. A. N. Nazarov,S. I. Tiagulskyi,I. P. Tyagulsky,V. L. Lysenko,L. Rebohle,J. Lehmann,S. Prucnal,M. Voelskow,W. Skorupa, The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices, Journal of Applied Physics, 107(), 2010, 123112 (1-14)

  9. S. Prucnal, L. Rebohle, W. Skorupa, Electroluminescence (at 316 nm) and electrical stability of a MOS light-emitting device operated at different temperatures, Applied Physics B: Lasers and Optics, 94(), 2009, 289-293

  10. S. Prucnal, L. Rebohle, A. Kanjilal, H. Krzyżanowska, W. Skorupa, White electroluminescence from a gadolinium-doped Si-nanocluster-enriched SiO2 -SiON interface region, Electrochemical and Solid-State Letters, 12 (9)(), 2009, H333-H335

  11. M. Turek, K. Pyszniak, A. Droździel, J. Sielanko, A. Latuszyński, D. Mączka, Y. A. Vaganov, Y. V. Yushkevich, Numerical model for extraction of ions from plasma, Instruments and Experimental Techniques, 52 (1)(), 2009, 90-98

  12. H. Krzyżanowska, M. Kulik, J. Żuk, W. Rzodkiewicz, A. P. Kobzev, W. Skorupa, Optical investigations of germanium nanoclusters - Rich SiO2 layers produced by ion beam synthesis, Journal of Non-Crystalline Solids, 355(), 2009, 1347-1354

  13. S. Prucnal, A. Wójtowicz, K. Pyszniak, A. Droździel, J. Żuk, M. Turek, L. Rebohle, W. Skorupa, Defect engineering In the MOSLED structure by ion impantation, Nuclear Instruments and Methods in Physics Research B, 267(), 2009, 1311-1313

  14. J. Żuk, J. Romanek, W. Skorupa, Micro-Raman depth profile investigations of beveled Al+-ion implanted 6H-SiC samples, Nuclear Instruments and Methods in Physics Research B, 267(), 2009, 1251-1254

  15. M. Turek, M. Brzuszek, Parallel Monte Carlo code for modelling of high temperature ion sources, Polish Journal of Environmental Studies, 18(3B)(), 2009, 373-380

  16. M. Turek, S. Prucnal, A. Droździel, K. Pyszniak, Arc discharge ion source for europium and other refractory metals implantation, Review of Scientific Instruments, 80(), 2009, 043304 (1-5)

  17. M. Turek, K. Pyszniak, A. Droździel, Influence of electron impact ionization on the efficiency of thermoemission ion source, Vacuum, 83(), 2009, 260-263

  18. M. Turek, J. Sielanko, Simulations of negative ion extraction from a multi-aperture ion source in the presence of the magnetic filter, Vacuum, 83(), 2009, 256-259

  19. Z. Wroński, J. Filiks, Fe and Ti cathodes sputtering by oxygen plasma in DC glow discharges, Vacuum, 83(), 2009, 77-80

  20. W. Rzodkiewicz, M. Kulik, K. Pyszniak, A. P. Kobzev, The influence of ion implantation on the optical parameters - refraction and extinction coefficients of the oxygen-enriched layers covering GaAs implanted with indium ions, Acta Physica Polonica A, 116(), 2009, 129 – 132

  21. W. Rzodkiewicz, M. Kulik, E. Papis, A. Szerling, Optical analyses of Si and GaAs semiconductors by fractional-derivative-spectrum methods, Acta Physica Polonica A, 116(), 2009, 95–98

  22. B. Boratyński, W. Macherzyński, A. Droździel, K. Pyszniak, Ion implanted ohmic contacts to AlGaN/GaN structures, Journal of Electrical Engineering, 60 (5)(), 2009, 273-275

  23. A. P. Kobzev, J. Huran, D. Mączka, M. Turek, Investigation of light element contents in subsurface layers of silicon, Vacuum, 83(), 2009, 124-126

  24. T. Tsvetskova, P. Sellin, R. Carius, O. Angelov, D. Dimova-Malinowska, J. Żuk, Optical contrast formation in amorphous silicon carbide with high-energy focused ion beams, Nuclear Instruments and Methods in Physics Research B, 267(), 2009, 1583-1587

  25. Yastrubchak, O. Domagała, J. Sadowski, J. Kulik, M. Żuk, J. Szymczak, R. Tóth, A. Wosiński, T., Influence of ion implantation on magnetic structural and optical properties of (Ga, Mn)As epitaxial films, Acta Physica Polonica A, 114(), 2008, 1445-1450

  26. Prucnal, S. Rebohle, L. Nazarov, A. Osiyuk, I. Tjagulskii, I. Skorupa, W., Reactivation of damaged rare earth luminescence centers in ion-implanted metal-oxide-silicon light emitting devices, Applied Physics B Lasers and Optics, B91(), 2008, 123-126

  27. Prucnal, S. Rebohle, L. Skorupa, W., Electroluminescence (at 316 nm) and electrical stability of an MOS light-emitting device operated at different temperatures, Applied Physics B Lasers and Optics, (), 2008, DOI 10.1007, s00340-008-3338-2

  28. Krzyżanowska, H. Bubert, H. Żuk, J. Skorupa, W., Composition of Ge+ and Si+ implanted SiO2 /Si layers: role of oxides in nanocluster formation, Journal of Non-Crystalline Solids, 354(), 2008, 4363-4366

  29. Krzyżanowska, H. Kobzev, A. Żuk, J. Kulik, M., Hydrogen and oxygen concentration analysis of porous silicon, Journal of Non-Crystalline Solids, 354(), 2008, 4367-4374

  30. Turek, M. Brzuszek, M. Sielanko, J., Hybrid MPI/openMP approach to the parallelisation of ion source plasma simulations, Polish Journal of Environmental Studies, 17(), 2008, 495-502

  31. Turek, M. Pyszniak, K. Droździel, A. Sielanko, J. Mączka, D., Komputerowe modelowanie procesu ekstrakcji wiązki z plazmowego źródła jonów, Przegląd Elektrotechniczny ISSN 0033-2097, 3(), 2008, 288-291

  32. Kulik, M. Rzodkiewocz, W. Żuk, J. Komarov, F., Spectroscopic elipsometry study of the influence of indium ion implantation on dielectric function of GaAs, Przegląd Elektrotechniczny ISSN 0033-2098, 84(), 2008, 196-199

  33. Prucnal, S. Rebohle, L. Skorupa, W., Investigation of the temperature degradation and re-activation of the luminescent centres in rare earth implanted SiO2 layers, Solid State Phenomena, (), 2008, 131-133, 595-600

  34. Turek, M. Pyszniak, K. Droździel, A. Sielanko, J., Ionization efficiency calculations for cavity thermoionization ion source, Vacuum, 82(), 2008, 1103-1106

  35. Turek, M. Sielanko, J., A 3D computer simulation of negative ion extraction influenced by electron diffusion and weak magnetic field, AIP Conference Proceedings PLASMA 2007, 2008 American Institute of Physics, 993(), 2008, 61-64

  36. Wroński, Z., Physics of the plasma-cathode of glow discharge in oxygen with aluminium cathode, AIP Conference Proceedings PLASMA 2007, 2008 American Institute of Physics, 993(), 2008, 431-434

  37. Brzuszek, M. Sasak, A. Turek, M., Speculative computing of recursive functions taking values from finite sets, International Symposium on Parallel and Distributed Computing, IEEE Conference Proceedings, (), 2008, 57-64 (DOI: 10.11.1109/ISDC.2008.23)

  38. Pyszniak, A. Turek, M. Droździel, A. Sielanko, J. Mączka, D. Vaganov, Yu. Yushkievich, Yu., Ustanovka dla issledovanija procesov ionnogo razpylenija pod vlijanijem puczkov ionov srednich energii, Preprint ZIBJ Dubna, (), 2008, P13-2008-145

  39. Kulik, M. Żuk, J. Rzodkiewicz, W. Pyszniak, K. Droździel, A. Turek, M. Prucnal, S. Sochacki, M. Szmidt, J., Badania optyczne politypów 6H-SiC oraz 15R-SiC poddanych wielokrotnej implantacji jonami glinu w podwyższonej temperaturze, Elektronika , (), 2008, 7-8, 15-18

  40. Krzyżanowska, H. Kulik, M. Rzodkiewicz, W. Kobzev, A. Skorupa, W. Żuk, J., Optical Investigations of Germanium Nanocluster-rich SiO2 Layers Produced by Ion Beam Synthesis,Ukraine, L`viv, Abstract of the 5-th International Workshop on Functional and Nanostructured Materials, (), 2008, 34

  41. Rzodkiewicz, W. Borowicz, P. Borowicz, L. Guziewicz, M. Kulik, M., Studies of physical properties of MIS structures with aluminium Gate, abstract book Photon 08,UK, Edinburgh, Abstract Book the UK¢s Premier Conference in Optics and Photonics PHOTON08, (), 2008, 36

  42. Żuk, J. Romanek, J. Skorupa, W., Micro-raman depth profile investigations on bevelled Al+ ion implanted 6H-SiC samples,Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 213

  43. Żuk, J. Krzyżanowska, H. Kulik, M. Clouter, M. Rzodkiewicz, W., Elastic characterization of ion implanted layers by Brillouin scattering from surface acoustic waves,Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 254

  44. Prucnal, S. Skorupa, W., Defect engineering in MOSLED structures by ion implantation, Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 109

  45. Nazarov, A. Osiyuk, I. Tyagulskyy, I. Prucnal, S. Rebohle, L. Skorupa, W., Charge Trapping in Rear-Earth Ion-Implanted SiO2-Si Light-Emitting Diodes,Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 111

  46. Rebohle, L. Lehmann, J. Prucnal, S. Nazarov, A. Tyagulskyy, I. Skorupa, W. Helm, M., The correlation between electroluminescence properties and the microstructure of Eu-implanted MOS light emitting devices, Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 369

  47. Rebohle, L. Sun, J. Prucnal, S. Nazarov, A. Tyagulskii, I. Helm, M. Skorupa, W., Huge Performance Increase of Tb-implanted MOS Light Emitting Devices with SiOxNy Layers Moderating Hot Carrier Effects,Boston MA (USA), Abstracts of MRS fall meeting 2008 , (), 2008,

  48. Żuk, J. Krzyżanowska, H. Kulik, M. Clouter, M. Rzodkiewicz, W., On the use surface Brillouin scattering and ellipsometry for elastic characterization of ion implanted materials, (2008), online, Wisła, Poland, Abstracts of 37-th Winter School on Wave and Quantum Acoustics, (), 2008,

  49. Rebohle, L. Cherkouk, C. Prucnal, S. Skorupa, W. Helm, M., Rare-earth implated Si-based light emitters and their use for smart biosensor application,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 27

  50. Prucnal, S. Rebohle, L. Skorupa, W., Temperature degradation and re-activation of the luminescent centres in rare earth implanted SiO2 layers,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 30

  51. Kulik, M. Rzodkiewicz, W. Żuk, J. Krzyżanowska, H. Kobzev, A. Skorupa, W., Dielectric function of doubly implanted Ge+ - implanted and annealed SiO2 layers,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 31

  52. Wroński, Z., Fe and Ti cathodes sputtering by oxygen plasma in glow discharges,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 57

  53. Krzyżanowska, H. Żuk, J. Filiks, J. Kulik, M. Rzodkiewicz, W., Optical constants of low ion fluence implanted GaAs determined by differential reflectance and spectroscopic ellipsometry,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 93

  54. Kulik, M. Rzodkiewicz, W. Żuk, J. Mączka, D., Optical parameters changes of In+ - implanted and annealed GaAs: spectroscopic ellipsometry study,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 94

  55. Yastrubchak, O. Domagała, J. Sadowski, J. Kulik, M. Żuk, J. Rzodkiewicz, W. Szymczak, R. Wosiński, T., Modification the magnetic, structural and optics properties of (Ga,Mn)As epitaxial films by ion implantation,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 121

  56. Tsvetkova, T. Balabanov, S. Borisova, E. Avramov, L. Bischoff, L. Żuk, J., Optical properties of Si+ implanted PMMA,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 164

  57. Turek, M. Sielanko, J., Simulations of negative ion extracction from a multi-aperture ion source in the presence of the magnetic filter,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 167

  58. Turek, M. Pyszniak, K. Droździel, A., The influence of electron impact ionization on the efficiency of thermoemission ion source,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 168

  59. Borowicz, L. Rzodkiewicz, W. Borowicz, P. Kulik, M., Badania własności fizycznych warstwy SiO2 pod bramką aluminiową, Darłowo, Materiały VII Krajowej Konferencji Elektroniki, 1(), 2008, 13-18

  60. Kulik, M. Kobzev, A.P. Jaworska, D. Żuk, J. Filiks, J., Investigation of indium diffusion process in In+ ion implanted GaAs, Vacuum, 81(10), 2007, 1124-1128

  61. Drabik, M. Dworecki, K. Tanczyk, R. Wasik, S. Zuk, J., Surface modification of PET membrane by ion implantation, Vacuum, 81(10), 2007, 1348-1351

  62. Prucnal, S. Sun, J.M. Reuther, H. Buchal, C. Zuk, J. Skorupa, W., Electronegativity and point defect formation in the ion implanted SiO2 layers, Vacuum, 81(10), 2007, 1296-1300

  63. Latuszynski, A. Pyszniak, K. Drozdziel, A. Turek, M. Maczka, D. Meldizon, J., Atom ionization process in the thermoionization ion source, Vacuum, 81(10), 2007, 1150-1153

  64. Pyszniak, K. Drozdziel, A. Turek, M. Wojtowicz, A. Sielanko, J., Secondary ion emission from Ti and Si targets induced by medium energy Ar+ ion bombardment - Experiment and computer simulation, Vacuum, 81(10), 2007, 1145-1149

  65. Wronski, Z., Role of ions in the abnormal glow of the plasma-cathode interface of neon glow discharges, Vacuum, 81(10), 2007, 1133-1136

  66. Michalak, L. Mączka, D. Żuk, J., Special issue - Proceedings of the 6th International Conference on Ion Implantation and other Applications of Ions and Electrons (ION 2006), Vacuum, 81(10), 2007, 1123-1123

  67. Prucnal S, Sun JM, Reuther H, Skorupa W, Buchal C, Strong improvement of the electroluminescence stability of SiO2 : Gd layers by potassium co-implantation, Electrochemical and Solid State Letters, 10(2), 2007, J30-J32

  68. Prucnal S, Sun JM, Muecklich A, Skorupa W, Flash lamp annealing vs rapid thermal and furnace annealing for optimized metal-oxide-silicon-based light-emitting diodes, Electrochemical and Solid State Letters, 10(2), 2007, H50-H52

  69. Nazarov AN, Osiyuk IN, Sun JM, Yankov RA, Skorupa W, Tyagulskii IP, Lysenko VS, Prucnal S, Gebel T, Rebohle L, Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes, Applied Physics B-Lasers and Optics, 87(1), 2007, 129-134

  70. Prucnal, S. Sun, J.M. Nazarov, A. Tjagulskii, I.P. Osiyuk, I.N. Fedaruk, R. Skorupa, W., Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO2 layers, Applied Physics B-Lasers and Optics, 88(), 2007, 241-244

  71. S. Prucnal, J.M. Sun, H. Reuther, C. Buchal, J. Żuk and W. Skorupa, Electronegativity and point defect formation in the ion implanted SiO2 layers, Vacuum, 81(10), 2007, 1296-1300

  72. S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, Switchable two-color electroluminescence based on a Si metal-oxide-semiconductor structure doped with Eu, Applied Physics Letters, 90(), 2007, 181121

  73. Pyszniak, A. Droździel, A. Turek, M. Latuszyński, A. Mączka, D. Sielanko, J. Vaganov, Yu.A. Yushkevich, Yu.V., Extraction of ions a plasma source and formation of beams, Instruments and Experimental Techniques, 50(), 2007, 552-556

  74. Drozdziel, A. Pyszniak, K. Sielanko, J. Turek, M. Wojtowicz, A., Experimental apparatus for investigation of sputtering and secondary ion emission induced by energetic ion beams, Rapid Communications in Mass Spectrometry, 20(2), 2006, 298-302

  75. Nazarov, A. Osiyuk, I. Tyagulskii, I. Lysenko, V. Prucnal, S. Sun, J. Skorupa, W. Yankov, R. A., Charge trapping phenomena in high-efficiency metal-oxide- silicon light-emitting diodes with ion-implanted oxide, Journal of Luminescence, 121(2), 2006, 213-216

  76. Sun JM, Prucnal S, Skorupa W, Dekorsy T, Muchlich A, Helm M, Rebohle L, Gebel T, Electroluminescence properties of the Gd3+ ultraviolet luminescent centers in SiO2 gate oxide layers, Journal of Applied Physics, 99(10), 2006, 103102

  77. Sun JM, Prucnal S, Skorupa W, Helm M, Rebohle L, Gebel T, Increase of blue electroluminescence from Ce-doped SiO2 layers through sensitization by Gd3+ ions, Applied Physics Letters, 89(9), 2006, 091908

  78. Romanek, J. Grambole, D. Herrmann, F. Voelskow, M. Posselt, M. Skorupa, W. Zuk, J., Ion implantation-induced damage depth profile determination in SIC by means of RBS/C and bevelling technique, Nuclear Instruments & Methods in Physics Research Section B- Beam Interactions with Materials and Atoms, 251(1), 2006, 148-156

  79. Turek, M. Drozdziel, A. Pyszniak, K. Sielanko, J., Extraction of the ion beam from hollow cathode ion source. Experiment and computer simulation, Vacuum, 78(2-4), 2005, 649-654

  80. Youssef, A. A. Budzynski, P. Filiks, J. Surowiec, Z., Improvement of tribological properties of aluminum by nitrogen implantation, Vacuum, 78(2-4), 2005, 599-603

  81. Budzynski, P. Filiks, J. Zukowski, P. Kiszczak, K. Walczak, M., Effect of mixed N and Ar implantation on tribological properties of tool steel, Vacuum, 78(2-4), 2005, 685-692

  82. Klockenkamper, R. Becker, M. von Bohlen, A. Becker, H. W. Krzyzanowska, H. Palmetshofer, L., Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection x-ray fluorescence, Journal of Applied Physics, 98(3), 2005, art. no.-033517

  83. Zuk, J. Krzyzanowska, H. Clouter, M. J. Bromberek, M. Bubert, H. Rebohle, L. Skorupa, W., Brillouin scattering and x-ray photoelectron studies of germanium nanoclusters synthesized in SiO2 by ion implantation (vol 96, pg 4952, 2004), Journal of Applied Physics, 97(8), 2005, art. no.-089901

  84. Michalak, L. Maczka, D. Zuk, J., Proceedings of the Fifth International Conference on Ion Implantation and Other Applications of Ions and Electrons (ION 2004), 14-17 June 2004, Kazimierz Dolny, Poland - Editorial, Vacuum, 78(2-4), 2005, 113-114

  85. Wiatrowski, A. Boratynski, B. Prucnal, S. Synowiec, Z. Zuk, J., Proton implant isolation in GaN, Vacuum, 78(2-4), 2005, 463-466

  86. Cheng, X. Q. Sun, J. M. Kogler, R. Skorupa, W. Moller, W. Prucnal, S., Photoluminescence of Er-doped SiO2 layers containing Si nanoclusters using dual ion implantation and annealing, Vacuum, 78(2-4), 2005, 667-671

  87. Prucnal, S. Cheng, X. Q. Sun, J. M. Kogler, R. Zuk, J. Skorupa, W., Optical and microstructural properties of doubly Ge-Si implanted SiO2 layers, Vacuum, 78(2-4), 2005, 693-697

  88. Wronski, Z. Sielanko, J., Glow discharge sputtering of two-component cathode target, Vacuum, 78(2-4), 2005, 605-610

  89. Wronski, Z., Dissociation of nitrogen in the plasma-cathode interface of glow discharges, Vacuum, 78(2-4), 2005, 641-647

  90. Skorupa W, Sun JM, Prucnal S, Rebohle L, Gebel T, Nazarov AN, Osiyuk IN, Helm M, Rare earth ion implantation for silicon based light emission, Solid State Phenomena, 108-109(), 2005, 755-760

  91. Youssef, A. A. Budzynski, P. Filiks, J. Kobzev, A. P. Sielanko, J., Improvement of wear and hardness of steel by nitrogen implantation, Vacuum, 77(1), 2004, 37-45

  92. Zuk, J. Krzyzanowska, H. Clouter, M. J. Bromberek, M. Bubert, H. Rebohle, L. Skorupa, W., Brillouin scattering and x-ray photoelectron studies of germanium nanoclusters synthesized in SiO2 by ion implantation, Journal of Applied Physics, 96(9), 2004, 4952-4959

  93. Turek, M. Rozmej, P., Spin-orbit entanglement in time evolution of radial wave packets in hydrogenic systems, Open Systems & Information Dynamics, 11(4), 2004, 401-409

  94. Andrews, G. T. Clouter, M. J. Zuk, J., Brillouin light scattering study of surface acoustic phonons in p(+) porous silicon layers, Semiconductor Science and Technology, 19(11), 2004, 1306-1310

  95. Meldizon, J. Drozdziel, A. Latuszynski, A. Prucnal, S. Pyszniak, K. Maczka, D., An ion source for solid elements with mechanical sputtering, Vacuum, 70(2-3), 2003, 447-450

  96. Latuszynski, A. Drozdziel, A. Pyszniak, K. Dupak, J. Maczka, D. Meldizon, J., Plasma ion source with hollow cathode, Vacuum, 70(2-3), 2003, 451-455

  97. Sielanko, J. Filiks, J. Herec, J., The sputtering of light target material during implantation of heavy ions, Vacuum, 70(2-3), 2003, 381-384

  98. Krzyzanowska, H. von Bohlen, A. Klockenkamper, R., Depth profiles of shallow implanted layers by soft ion sputtering and total-reflection X-ray fluorescence, Spectrochimica Acta Part B-Atomic Spectroscopy, 58(12), 2003, 2059-2067

  99. Romanek, J. Kobzev, A. P. Kulik, M. Tsvetkova, T. Zuk, J., RBS and optical studies of ion-implanted amorphous silicon carbide layers, Vacuum, 70(2-3), 2003, 457-465

  100. Tsvetkova, T. Balabanov, S. Skordeva, E. Kitova, S. Sielanko, J. Maczka, D. Zuk, J., Surface morphology effects of post-implantation annealing in thin amorphous films of the As-Se system, Vacuum, 72(2), 2003, 143-147

  101. Michalak, L. Maczka, D. Zuk, J., Ion 2002, Vacuum, 70(2-3), 2003, 73-74

  102. Komarov, A. F. Komarov, F. F. Mironov, A. M. Nikiforenko, N. N. Maczka, D. Kamyshan, A. F., Formation of CxNy films by high dose nitrogen implantation in the layered structures, Vacuum, 70(2-3), 2003, 141-145

  103. Tsvetkova, T. Balabanov, S. Skordeva, E. Kitova, S. Sielanko, J. Maczka, D. Zuk, J., Ion implantation induced surface morphology changes in thin As3Se2 films, Vacuum, 70(2-3), 2003, 471-475

  104. Wronski, Z. Sielanko, J. Herec, J., Ti and Fe cathode sputtering by the glow discharge plasma, Vacuum, 70(2-3), 2003, 275-284

  105. Wronski, Z., Light emission from the cathode zone of DC glow discharge, Vacuum, 70(2-3), 2003, 339-345

  106. Tsvetkova, T. Angelov, O. Sendova-Vassileva, M. Dimova-Malinovska, D. Bischoff, L. Adriaenssens, G. J. Grudzinski, W. Zuk, J., Structural and optical properties modification of a-SiC : H by Ga+ ion implantation, Vacuum, 70(2-3), 2003, 467-470

  107. Youssef, A. A. Budzynski, P. Filiks, J. Kamienska, B. Maczka, D., Tribological properties of Ti-implanted duralumin and stainless steel, Vacuum, 68(2), 2002, 131-137

  108. Rozmej, P. Turek, M. Arvieu, R. Averbukh, I. S., Relativistic precession and spin dynamics of an elliptic Rydberg wave packet, Journal of Physics a-Mathematical and General, 35(36), 2002, 7803-7816

  109. Herec, J. Sielanko, J. Filiks, J. Sowa, M., Low energy Cs+ and Cl- ion implantation into Si- SIMS investigations, Vacuum, 63(4), 2001, 743-748

  110. Kulik, M. Komarov, F. F. Maczka, D., RBS and channeling studies of GaAs implanted with In+ ions, Vacuum, 63(4), 2001, 755-759

  111. Kulik, M. Herec, J. Romanek, J., RBS and ellipsometric studies of near surface GaAs ion implanted layers, Vacuum, 63(4), 2001, 761-766

  112. Maczka, D. Michalak, L., Proceedings of ION 2000 - Editorial, Vacuum, 63(4), 2001, 455-456

  113. Herec, J. Sielanko, J. Wronski, Z., Monte Carlo simulation of the concentration distribution of sputtered cathode material in glow discharge plasma, Vacuum, 63(4), 2001, 507-512

  114. Wronski, Z., Plasma of the cathode zone of glow discharges and its interaction with the cathode surface, Vacuum, 63(4), 2001, 535-539

  115. Maczka, D. Kiszczak, K. Drozdziel, A. Pyszniak, K., Multiple ionization in plasma ion source of electromagnetic isotope separator, Vacuum, 58(2-3), 2000, 536-542

  116. Zuk, J. Krzyzanowska, H. Kulik, M. Liskiewicz, J. Maczka, D. Akimov, A. A. Komarov, F. F., Raman scattering evidence of medium-range order in low fluence Se+-implanted GaAs, Nuclear Instruments & Methods in Physics Research Section B- Beam Interactions with Materials and Atoms, 168(4), 2000, 521-526

  117. Zuk, J. Clouter, M. J. Kulik, M. Romanek, J. Maczka, D., Brillouin scattering study of surface acoustic waves in indium- implanted GaAs, Vacuum, 58(2-3), 2000, 543-550

  118. Arvieu, R. Rozmej, P. Turek, M., Spin dynamics of wave packets evolving with the Dirac Hamiltonian in atoms with high atomic number Z, Physical Review A, 6202(2), 2000, art. no.-022514

  119. Turek, M. Rozmej, P. Arvieu, R., Spin-orbit pendulum (relativistic extension), Acta Physica Polonica B, 31(2), 2000, 517-521

  120. Wronski, Z., Study of fundamental processes affecting the structure of the cathode zone of nitrogen/titanium dc discharge, Journal of Physics D-Applied Physics, 33(4), 2000, 414-425

  121. Drozdziel, A. Kornarzynski, K. Romanek, J. Maczka, D. Latuszynski, A., Positive and negative ion production in the ion sputtering process, Nukleonika, 44(2), 1999, 111-118

  122. Herec, J. Filiks, J. Sielanko, J., SIMS study of low energy implantation, Nukleonika, 44(2), 1999, 103-110

  123. Herec, J. Filiks, J. Sowa, M. Sielanko, J. Maczka, D., Negative ion source for SIMS application, Nukleonika, 44(2), 1999, 119-128

  124. Kulik, M. Saied, S. O. Liskiewicz, J. Maczka, D., Oxide layers on implanted GaAs surfaces: X-ray-photoelectron spectroscopy and ellipsometry study, Nukleonika, 44(2), 1999, 167-173

  125. Kulik, M. Komarov, F. F. Maczka, D., Effect of thermal annealing on optical properties of implanted GaAs, Acta Physica Polonica A, 96(1), 1999, 131-135

  126. Latuszynski, A. Maczka, D., Atom ionization in the high-temperature cavity thermoionizer, Nukleonika, 44(2), 1999, 149-154

  127. Layberry, R. L. Wronski, Z. Pearce, C. G. Sullivan, J. L., A model of capacitively coupled radio-frequency methane/hydrogen plasmas for III-V semiconductor etching applications, Journal of Physics D-Applied Physics, 32(15), 1999, 1857-1869

  128. Zuk, J. Kuduk, R., Ion beam induced luminescence of porous silicon: A comparative study, Nukleonika, 44(2), 1999, 335-340

  129. Krzyzanowska, H. Kulik, M. Zuk, J., Ellipsometric study of refractive index anisotropy in porous silicon, Journal of Luminescence, 80(1-4), 1998, 183-186

  130. Zuk, J. Ochalski, T. J. Kulik, M. Liskiewicz, J. Kobzev, A. P., Effect of oxygen implantation on ionoluminescence of porous silicon, Journal of Luminescence, 80(1-4), 1998, 187-192

  131. Latuszynski, A. Maczka, D., High temperature cavity thermo-ionizer, Vacuum, 51(2), 1998, 109-112

  132. Wronski, Z. Murlak-Stachura, H., The energy distributions of major ions in the cathode zone of a strongly abnormal nitrogen DC glow discharge, Vacuum, 49(2), 1998, 97-100

  133. Ochalski, T. J. Zuk, J. Reginski, K. Bugajski, M., Photoreflectance studies of InGaAs/GaAs/AlGaAs single quantum well laser structures, Acta Physica Polonica A, 94(3), 1998, 463-467

  134. Drozdziel, A. Latuszynski, A. Maczka, D. Pyszniak, K., Study of some processes in the ion sources at the UMCS mass separator, Nuclear Instruments & Methods in Physics Research Section B- Beam Interactions with Materials and Atoms, 126(1-4), 1997, 58-62

  135. Zuk, J. Kulik, M. Andrews, G. T. Kiefte, H. Clouter, M. J. Goulding, R. Rich, N. H. NossarzewskaOrlowska, E., Characterization of porous silicon by Raman scattering and photoluminescence, Thin Solid Films, 297(1-2), 1997, 106-109

  136. Ochalski, T. J. Zuk, J. Vlasukova, L. A., Effect of epitaxial layer thickness on built-in electric field in region of AlGaAs/SI-GaAs interface: A photoreflectance study, Acta Physica Polonica A, 92(5), 1997, 935-939

  137. Andrews, G. T. Zuk, J. Goulding, R. Kiefte, H. Clouter, M. J. Rich, N. H., Raman scattering from a p(+)-type porous silicon layer, Canadian Journal of Physics, 75(7), 1997, 473-476

  138. Latuszynski, A. Kornarzynski, K. Drozdziel, A. Pyszniak, K. Maczka, D., Negative ion beams from a plasma type source with additional surface ionization, Vacuum, 47(10), 1996, 1219-1222

  139. Latuszynski, A. Maczka, D. Yushkevich, Y., The generation of radioactive ion beams, Vacuum, 47(11), 1996, 1341-1344

  140. Zukowski, P. Karwat, C. Komarov, F. F. Latuszynski, A., Formation of copper nitrides in the course of implanting copper with large doses of nitrogen ions, Physica Status Solidi a-Applied Research, 157(2), 1996, 373-378

  141. Wronski, Z. Sielanko, J. Sullivan, J. L., Studies of light emission from cathode material in the plasma phase of a glow discharge, Journal of Physics D-Applied Physics, 29(6), 1996, 1509-1514

  142. S. Prucnal, L. Rebohle, W. Skorupa, Blue electroluminescence of ytterbium clusters in SiO2 by co-operative up-conversion, Applied Physics B: Lasers and Optics, (), , 10.1007/s00340-009-3751-1


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