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Strona główna » Instytut » Pracownicy » Mieczysław Jałochowski

prof. dr hab. Mieczysław Jałochowski

Zakład

Zakład Fizyki Powierzchni i Nanostruktur

Stanowisko:

profesor zwyczajny

Kontakt:

pokój: 404
telefon: (081) 537-62-85
e-mail: mieczyslaw.jalochowski@umcs.pl

Specjalność naukowa:

fizyka doświadczalna

Funkcje pełnione w IF UMCS:

Kierownik Zakładu

Publikacje: Ukryj abstrakty

  1. M. Krawiec,M. Jałochowski, Array of double Au-Ag chains on the Si(557) surface, Applied Surface Science, 256(), 2010, 4813-4817

  2. M. Krawiec,M. Jałochowski, Doping of the step-edge Si chain: Ag on a Si(557)-Au surface, Physical Review B, 82(), 2010, 195443 (1-7)

  3. T. Kwapiński,M. Jałochowski, Signature of tip electronic states on tunneling spectra, Surface Science, 604(), 2010, 1752-1756

  4. A. Stępniak, P. Nita, M. Krawiec, M. Jałochowski, In and Si adatoms on Si(111)5x2-Au: Scanning tunneling microscopy and first-principles density functional calculations, Physical Review B, 80(), 2009, 125430 (1-8)

  5. HoangVuChung, M. Klevenz, R. Lovrincic, F. Neubrech, O. Skibbe, A. Pucci, P. Nita, M. Jałochowski, T. Nagao, Studies on gold atom chains and lead nanowires on silicon vicinal surfaces, Journal of Physics: Conference Series, 187(), 2009, 012025 (1-6)

  6. Klevenz, M. Neubrech, F. Lovrincic, R. Jałochowski, M. Pucci, A., Infrared resonances of self-assembled Pb nanorods, Applied Physics Letters, 92(), 2008, 133116 (1-3)

  7. Kisiel, M. Skrobas, K. Jałochowski, M., Photoelectron diffraction effect In the highly ordered Si(557)/Pb surface, Applied Surface Science, 254(), 2008, 4313-4317

  8. Jałochowski, M., Monoatomowe łańcuchy na wicynalnych powierzchniach Si, Kraków, II Krajowa Konferencja Nanotechnologii, Książka streszczeń, (), 2008,

  9. Stępniak, A. Nita, P. Jałochowski, M., Jednowymiarowe struktury In na powierzchni Si(11 11 13), Kraków, II Krajowa Konferencja Nanotechnologii, Książka streszczeń, (), 2008,

  10. Nita, P. Stępniak, A. Jałochowski, M. Skrobas, K. Zdyb, R. Krawiec, M., Rekonstrukcje In na powierzchni Si(335)-Au,Kraków, II Krajowa Konferencja Nanotechnologii, Książka streszczeń, (), 2008,

  11. Nita, P. Stępniak, A. Jałochowski, M., Podwójne łańcuchy In na powierzchni Si(335)-Au, Zakopane, Streszczenia V Seminarium STM/AFM, wyd. IF UJ, Kraków 2008, (), 2008, U-6

  12. Jałochowski, M. Stróżak, M. Zdyb, R., Klastery atomów Pb na powierzchni Si(111)-(7x7), Zakopane, Streszczenia V Seminarium STM/AFM, wyd. IF UJ, Kraków 2008, (), 2008, P-I-13

  13. Skrobas, K. Zdyb, R. Kisiel, M. Jałochowski, M., Band structure of In chains on Si(335)-Au, Materials Science-Poland, 26(), 2008, 55-61

  14. Skrobas, K. Zdyb, R. Jałochowski, M., Struktura elektronowa klasterów Pb i In na powierzchni Si(111)-(7x7), Kraków, II Krajowa Konferencja Nanotechnologii, Książka streszczeń, (), 2008,

  15. Kwapiński, T. Jałochowski, M. Nita, P. Stępniak, A., Asymetria przewodnictwa STS pojedynczych atomów, Zakopane, Streszczenia V Seminarium STM/AFM, wyd. IF UJ, Kraków 2008, (), 2008, P-I-12

  16. Stępniak, A. Nita, P. Krawiec, M. Jałochowski, M., Jednowymiarowe struktury z atomów In na powierzchni Si(111)-(5x2)-Au, Zakopane, Streszczenia V Seminarium STM/AFM, wyd. IF UJ, Kraków 2008, (), 2008, U-4

  17. Kwapiński, T. Krawiec, M. Jałochowski, M., STM tunneling through a quantum wire with a side-attached impurity, Physics Letters A, 372(), 2008, 154-161

  18. Krawiec, M. Jalochowski, M., Thermoelectric effects in STM tunneling through a monoatomic chain, Physica Status Solidi B-Basic Solid State Physics, 244(7), 2007, 2464-2469

    Abstract:
    We study thermoelectric properties of the system composed of a monoatomic chain on a surface and additional electrode coupled to the chain, which can be an STM tip. In particular, we are interested in thermopower, electric and thermal conductance, Wiedemann-Franz relation and thermoelectric figure of merit, which is a direct measure of the usefulness of the system for applications. We discuss the modifications of the STM wire topography due to temperature difference between the electrodes. Finally, we also make connection to STM experiment, in which the thermopower has been directly measured, showing different structure, not visible in topography spectra. (c) 2007 WILEY-NCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Kisiel, M. Skrobas, K. Zdyb, R. Mazurek, P. Jałochowski, M., Pb chains on ordered Si(335) surface, Physics Letters A, 364(), 2007, 152-156

  20. Tringides, M.C. Jalochowski, M. Bauer, E., Quantum size effects in metallic nanostructures, Physics Today, 60(), 2007, 50-54

  21. Pucci, A. Kost, F. Fahsold, G. Jalochowski, M., Infrared spectroscopy of Pb layer growth on Si(111), Physical Review B, 74(12), 2006, art. no.-125428

    Abstract:
    The growth of Pb films on Si(111)-(6x6) Au and on Si(111)-(7x7) Au at 120 K was investigated in situ with infrared transmittance spectroscopy. In the development of the transmission spectra with film thickness the formation of the crystalline layer, the layer-by-layer growth mode, and size effects can be identified. The infrared spectra are analyzed with the Drude model for the dielectric function. In order to get a good fit, both the parameters' plasma frequency and relaxation rate must become thickness dependent, which is explained in relation to the quantum-size effects and to the classical-size effect. This work is the first infrared spectroscopic study of quantum-size effect-related oscillations in metal films.

  22. Kisiel, M. Jalochowski, M. Zdyb, R., Morphology and electronic structure of submonolayer Pb on Si(111)-(6x6)Au, Physics Letters A, 357(2), 2006, 141-145

    Abstract:
    The electronic structure and the morphology of Pb adsorbed on the Si(111)-(6 x 6)Au substrate in the coverage range from 0.025 up to 1 monolayer are investigated with ultraviolet photoelectron spectroscopy (UPS) and scanning tunneling microscopy (STM). The UPS measurements reveal two distinct peaks in the spectra. Correlation with the STM images allows us to associate one of them with single Pb atoms. The second peak emerges at coverage of 0.075 ML and is identified as a localized quantum well state. An evolution of these states as a function of the Pb coverage is determined. (c) 2006 Elsevier B.V. All rights reserved.

  23. Zdyb, R. Pavlovska, A. Jalochowski, M. Bauer, E., Self-organized Fe nanostructures on W(110), Surface Science, 600(8), 2006, 1586-1591

    Abstract:
    The magnetic domain structure of Fe wires, ribbons and islands with different shapes that have been prepared under ultra high vacuum conditions on W(I 10) are studied with spin polarized low energy electron microscopy. The dimensions of the nanostructures, which are of the order of tens and hundreds of nm, can be controlled by the temperature at which they are produced, by the average Fe coverage and by the substrate morphology. The domain structure of the nanostructures depends on their shape and is determined by the competition between magnetoelastic.. shape and magnetocrystalline anisotropies. (c) 2006 Elsevier B.V. All rights reserved.

  24. Krawiec, M. Jalochowski, M. Kisiel, M., High resolution scanning tunneling spectroscopy of ultrathin Pb on Si(111)-(6 x 6) substrate, Surface Science, 600(8), 2006, 1641-1645

    Abstract:
    The electronic structure of Si(111)-(6 x 6)Au surface covered with sub-monolayer amount of Pb is investigated using scanning tunneling spectroscopy. Already in small islands of Pb with thickness of 1 ML Pb-(111) and with the diameter of only about 2 nm we detected the quantized electronic state with energy 0.55 eV below the Fermi level. Similarly, the I(V) characteristics made for the Si(111)-(6 x 6)Au surface reveal a localized energy state 0.3 eV below the Fermi level. These energies result from fitting of the theoretical curves to the experimental data. The calculations are based on tight binding Hubbard model. The theoretical calculations clearly show prominent modification of the I(V) curve due to variation of electronic and topographic properties of the STM tip apex. (c) 2006 Elsevier B.V.. All rights reserved.

  25. Krawiec, M. Kwapinski, T. Jalochowski, M., Double nonequivalent chain structure on a vicinal Si(557)-Au surface, Physical Review B, 73(7), 2006, art. no.-075415

    Abstract:
    We study electronic and topographic properties of the vicinal Si(557)-Au surface using scanning-tunneling microscopy (STM) and a reflection of high-energy electron diffraction technique. STM data reveal double wire structures along terraces. Moreover, the behavior of the voltage-dependent STM tip-surface distance is different in different chains. While the one chain shows oscillations of the distance which are sensitive to the sign of the voltage bias, the oscillations in the other chain remain unchanged with respect to the positive or negative biases. This suggests that one wire has metallic character while the other one has a semiconducting one. The experimental results are supplemented by theoretical calculations within tight binding model suggesting that the observed chains are made of different materials, one gold and the other silicon.

  26. Kisiel, M. Skrobas, K. Jalochowski, M., Angle-resolved photoemission of ultrathin Pb films on Si(111)- (6x6)Au: quantum size effect, Optica Applicata, 35(3), 2005, 443-448

    Abstract:
    The electronic band structure of extremely thin (from 1 to 8 monoatomic layer (ML) thick) epitaxial Pb(111) films grown at low temperatures in ultrahigh vacuum (UHV) condition on Si(111)-(6x6)Au substrate is studied with angle-resolved photoelectron spectroscopy (ARPES). The morphology of the Pb film is determined with scanning tunneling microscopy (STM). Normal-emission photoelectron spectra recorded at the sample temperature of 130 K reveal quantum well states (QWS) characteristic of quantization perpendicular to the film surface. The energies of these states as a function of the number of the Pb(l 11) monoatomic layers are determined and compared with calculated in terms of the Bohr-Sommerfeld phase accumulation model.

  27. Kisiel, M. Skrobas, K. Zdyb, R. Jalochowski, M., Band structure of Au monoatomic chains on Si(335) and Si(557) surfaces, Optica Applicata, 35(3), 2005, 449-455

    Abstract:
    The electronic band structure of the Si(557) and Si(335) surfaces covered with monoatomic Au chains produced in UHV conditions, is investigated in detail by. angle-resolved photoelectron spectroscopy (ARPES), especially for the surface state bands near the Fermi energy. The ARPES spectra in the plane parallel to step edges for Si(557)-Au vicinal surface show strongly dispersive electron energy bands, characteristic of one-dimensional structure. The band dispersion is also calculated within tight-binding model, with two adjustable coupling parameters t(1) and t(2), for the first and second neighbors along the chains, respectively, and compared with that determined from the photoemission experiment. The scanning tunneling microscopy (STM) imaging and reflection high energy electron diffraction (RHEED) studies enabled us to determine atomic chain separation and its internal structure. The study shows that the structural anisotropy of these surfaces induces highly anisotropic electronic structure.

  28. Krawiec, M. Kwapinski, T. Jalochowski, M., Scanning tunneling microscopy of monoatomic gold chains on vicinal Si(335) surface: experimental and theoretical study, Physica Status Solidi B-Basic Solid State Physics, 242(2), 2005, 332-336

    Abstract:
    We study electronic and topographic properties of the Si(335) surface, containing Au wires parallel to the steps. We use scanning tunneling microscopy (STM) supplemented by reflection of high energy electron diffraction (RHEED) technique. The STM data show the space and voltage dependent oscillations of the distance between STM tip and the surface which can be explained within one hand tight binding Hubbard model. We calculate the STM current using nonequilibrium Keldysh Green function formalism. (c) 2(9)5 WILFY-VCH Verlag GmbH W Co KGaA. Weinheim.

  29. Jalochowski, M. Strozak, M. Zdyb, R., Optical recognition of structural and electronic transformation of Pb ultrathin films, Journal of Physics-Condensed Matter, 16(39), 2004, S4345-S4352

    Abstract:
    In this study, the transformation of ultrathin Pb film on a Si(111)-(7 x 7) surface from amorphous-like to crystalline state is examined at low temperatures during the film growth by measuring the differential reflectance (DR) DeltaR/R, as a function of film thickness. The experiments were performed under ultrahigh vacuum conditions in the visible and infrared spectral range. The determined imaginary part of the Pb dielectric function changes steeply at the critical thickness of the film of about 5 monoatomic Pb(111) layers. High energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM) studies revealed a film with fine granular morphology before the structural transition and a well ordered epitaxial layer after the transformation. The variation of the optical (AC) conductivity was compared with DC electrical conductance data. We show that the DR technique can be efficiently used to characterize structural and electronic changes in ultrathin metallic films.

  30. Zdyb, R. Jalochowski, M. Strozak, M., Quantum size effect in absorption of low energy electrons in Pb layers, Vacuum, 74(2), 2004, 217-222

    Abstract:
    Absorption of low-energy electrons in Pb ultrathin layers grown on a Si(111)-(6 x 6)Au substrate has been measured as a function of the incident electron energy and of the film thickness. The thickness-dependent curves of the current revealed two distinct features. One of them is associated with the quantum size effect and showed the characteristic oscillatory behavior with the periodicity determined by the film thickness. The other, independent of the film thickness, was attributed to the bulk band structure of Pb. On the basis of the changes in the quantum size oscillations peak position as a function of the transmitted electron energy, and of the layer thickness, the electronic band structure of Pb 8-20eV above the vacuum level has been determined in the GammaL direction. (C) 2004 Elsevier Ltd. All rights reserved.

  31. Strozak, M. Hnatyuk, V. Jalochowski, M., Optical properties of Pb nanowires on Si(335), Vacuum, 74(2), 2004, 241-245

    Abstract:
    Pb films and self-assembled nanowires on Si(3 3 5) grown at temperature equal to 265 K are investigated by optical reflectance method and scanning tunneling microscopy. In the optical studies s-polarized light with the photon energy from 0.35 to 2.0 eV was used. The measurements were performed during the Pb deposition, for two orientations of the sample: with the light electric field along, and perpendicularly to the Pb nanowires. Two thickness ranges were distinguished: first, for the coverages less than 2 ML, and second, for the larger coverages. The large anisotropy in the optical reflectance was observed in the second range of the thicknesses. The anisotropy was caused by the presence of self-assembled, parallelly aligned metallic nanowires. For the two orthogonal orientations of the sample the reflectance ratio as high as 3.8 was observed. (C) 2004 Elsevier Ltd. All rights reserved.

  32. Jalochowski, M., Si(111)-(6 x 6)Au surface morphology and nucleation of Pb at low temperature, Progress in Surface Science, 74(1-8), 2003, 97-107

    Abstract:
    The morphologies of the Si(111)-(6 x 6)Au surface and the nucleation of Pb have been investigated at temperatures below room temperature using scanning tunnelling microscopy (STM). The STM scans of the clean Si(111)-(6 x 6)Au surface revealed exceptionally rich and strongly bias-dependent details within the unit cell. After deposition of about 0.01 ML of Pb(I 11), at temperatures above 180 K, the single Pb atoms formed a two- dimensional mesh with (6 x 6)-Au periodicity. In this early stage of deposition, the Pb atoms occupied predominantly one specific site of the (6 x 6) unit cell. The local symmetry of this site determined the further growth of the Pb layer. As a consequence, the structure of the Pb layer on Si(111)(6 x 6)Au is rotated of 30degrees relative to that of the Pb layer on Si(111)-(7 x 7). (C) 2003 Elsevier Ltd. All rights reserved.

  33. Jalochowski, M. Strozak, M. Zdyb, R., Reflectance anisotropy during growth of Pb nanowires on well ordered Si(335) surface, Applied Surface Science, 211(1-4), 2003, 209-215

    Abstract:
    Ultrathin Pb films on Si(3 3 5) deposited at temperatures ranging from 105 to 305 K are investigated by optical reflectance method, scanning tunneling microscopy, and reflection high energy electron diffraction. From the reflectance data for light with photon energy of 0.6 eV, the imaginary part of the Pb dielectric function epsilon(2)(Pb) is determined. For films with coverages below about 2 monoatomic layers (ML), independent on the substrate temperature, epsilon(2)(Pb) linearly increases with the average film thickness. For larger Pb coverages, it strongly depends on the deposition temperature. The observed variation of the dielectric function is correlated with structural and topographic transitions of Pb ultrathin films growing on Si(3 3 5) surface. The origin of the optical anisotropy as a consequence of self-assembling of Pb nanowires on well ordered Si(3 3 5) substrate is discussed. (C) 2003 Elsevier Science B.V. All rights reserved.

  34. Kuroiwa, N. Fukushima, Y. Rajasekar, P. Neddermeyer, H. Jalochowski, M. Bauer, E. Yasue, T. Koshikawa, T., Copper nanostructure formation and structure analysis on hydrogen-terminated Si(111) surface, Surface and Interface Analysis, 35(1), 2003, 24-28

    Abstract:
    The growth of Cu nanostructures on the hydrogen-terminated Si(111) surface was studied by scanning tunnelling microscopy (STM). On the hydrogen-terminated Si(111) surface, small Cu nanostructures scatter mainly on the terraces and a few structures along the steps and domain boundaries at a deposition temperature of similar to310degreesC: the shape of the nanostructure is round or triangular, and the face is not clear. At similar to340degreesC, the Cu nanostructures form preferentially at steps and domain boundaries of the substrate: the shape is triangular with truncated corners and the nanostructures have some facets. The top face has an inclination angle of similar to6degrees and the side face has one of similar to35degrees. On the top face, mono-atomic steps can be seen similar to0.8 mn apart. From these results, it is concluded that the Cu nanostructure has a {554} facet on top and a {110} facet on the side. Copyright (C) 2003 John Wiley Sons, Ltd.

  35. Jartych, E. Jalochowski, M. Budzynski, M., Influence of the electrodeposition parameters on surface morphology and local magnetic properties of thin iron layers, Applied Surface Science, 193(1-4), 2002, 210-216

    Abstract:
    Iron layers with thickness of 70-200 nm were prepared by electrodeposition on the polycrystalline Cu substrate at different parameters of the electrolysis. The surface morphology of the iron layers and their local magnetic properties were studied using scanning tunneling microscopy (STM) and conversion electron Mossbauer spectroscopy (CEMS). STM studies revealed the granular structure of the surface of the electrodeposited iron layers with the roughness depending on the temperature of the bath, pH value and the current density. The influence of these electrodeposition parameters on the thickness of the iron layers became manifest in their magnetic anisotropy, as seen by CEMS. (C) 2002 Elsevier Science B.V. All rights reserved.

  36. Jalochowski, M. Strozak, M. Zdyb, R., Anomalous optical absorption in ultrathin Pb films, Physical Review B, 66(20), 2002, art. no.-205417

    Abstract:
    Ultrathin Pb films on Si(111)-(6x6)-Au deposited at 100 K are investigated by scanning tunneling microscopy, reflection high energy electron diffraction, and optical reflectance methods. From the reflectance data for light with a photon energy from 0.5 to 3 eV, the imaginary part of the Pb dielectric function epsilon(Pb) is determined. For films with a thickness of 12 ML, the Pb epsilon(Pb) vs photon energy resembles that expected for a bulk material. At smaller coverages the absorption spectrum shows anomalous, sharp optical structures. These structures are identified as strongly enchanced optical transitions characteristic of bulk materials. Simultaneously, a reduction of the free-electron Drude absorption is observed. This phenomenon is explained in terms of reduced electron screening. Our findings supply evidence of a bulklike electron band structure in ultrathin films and nanoparticles of Pb deposited on Si(111)-(6x6)Au.

  37. Mazurek, P. Jalochowski, M., Ordering of the vicinal Si(1510) surface at low Au coverage, Optica Applicata, 32(3), 2002, 247-252

    Abstract:
    Reflection high-energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM) are used to investigate the ordering process of vicinal silicon surface. A vicinal Si(15 1 0) sample was cut from a Si(001) monocrystal and oriented by X-ray diffractometry techniques. At Au coverage within 1-2 ML and after the subsequent annealing at about 1000 K in UHV conditions this surface exhibits a rectangular imbricate step/terrace structure. The best surface ordering was found at 1.5-2 ML Au coverage where flat Si(001) terraces show 5x3.2 surface reconstruction. The edges of these rectangular terraces are parallel to the [011] and [01 (1) over bar] direction. Due to high density of corners formed by the rectangular terraces, this surface may be suitable for nucleation of quasi zero-dimensional structures.

  38. Jalochowski, M. Strozak, M., Optical anisotropy of Pb nanowires on Si(533) surface, Optica Applicata, 32(3), 2002, 373-379

    Abstract:
    Ultrathin Pb films on Si(533)/Au surface deposited at low temperatures are investigated by STM, RHEED, and by optical reflectance difference spectroscopy (RDS). In particular, we report the observation by RDS of an anisotropy in the optical reflectance of the Si(533) surface covered by Pb nanowires. It is found that the optical anisotropy originates from anisotropy of electrical conductivity of the Si(533) substrate and the anisotropy of Pb nanowires formed on this surface.

  39. Yasue, T. Koshikawa, T. Jalochowski, M. Bauer, E., LEEM observation of formation of Cu nano-islands on Si(111) surface by hydrogen termination, Surface Science, 493(1-3), 2001, 381-388

    Abstract:
    The growth of Cu on Si(1 1 1) surface with and without hydrogen termination was studied with low energy electron microscopy. On the clean surface the two-dimensional "5 x 5 " incommensurate layer is first formed followed by the formation of three- dimensional (3D) islands. On the hydrogen-terminated surface the formation of the "5 x 5 " structure is suppressed and nano- scale 3D islands decorate the steps and domain boundaries of the delta7 x 7 structure. Many LEED spots from the nano-islands move with electron energy, which indicates that the islands are faceted. From the analysis of the LEED pattern it is suggested that the nano-islands are the (1 1 1)-oriented beta -phase Cu- Si alloy and are terminated by (1 1 1), {5 5 4} and {15 16 13} faces. (C) 2001 Elsevier Science B.V. All rights reserved.

  40. Jartych, E. Chocyk, D. Budzynski, A. Jalochowski, M., Surface morphology and local magnetic properties of electrodeposited thin iron layers, Applied Surface Science, 180(3-4), 2001, 246-254

    Abstract:
    Thin iron layers with different thickness were prepared by electrodeposition on the polycrystalline substrate. The surface morphology of the layers, their structure and local magnetic properties were studied using scanning tunneling microscopy (STM), X-ray diffraction (XRD) and conversion electron Mossbauer spectroscopy (CEMS). STM studies revealed the granular structure of the surface of the electrodeposited iron layers with the roughness up to 10 nm. XRD analysis proved that these layers were highly strained. The CEMS spectra showed an in-plane magnetic anisotropy in the iron layers. Isomer shift of the electrodeposited iron was different than that of the alpha -Fe. This difference was attributed to the internal stresses existing in the electrodeposited layers. (C) 2001 Elsevier Science B.V. All rights reserved.

  41. Jalochowski, M. Bauer, E., Self-assembled parallel mesoscopic Pb-wires on Au-modified Si(533) substrates, Progress in Surface Science, 67(1-8), 2001, 79-97

    Abstract:
    Arrays of extremely long and perfectly parallel mesoscopic Pb- wires are formed and studied in UHV conditions. Au-modified Si(5 3 3) substrate modified by deposition of sub-monolayer amount of Au are used as templates. A uniform distribution of monoatomic steps and terraces on well-oriented Si(5 3 3) is induced by formation of Au-chains running along step edges. Realtime surface imaging with LEEM shows that the wires growing on substrates held at temperatures close to the room temperature are all aligned parallel to [0 1 (1) over bar] azimuth, along the step edges. After nucleation of elongated islands, the I ML thick wetting layer remains on the vicinal Si surface. RHEED and low-temperature STM experiments show that the wires have triangular cross-section, limited by (1 1 1) and (1 0 0) facets of Pb. The width of the wires is 60 nm, whereas their length is up to 8 mum. The observed growth anisotropy leading to the formation of mesoscopic wires is attributed to enhanced one-dimensional diffusion along the parallel grooves and trenches that form vicinal surfaces. An additional factor, contributing to the anisotropic growth, is probably the anisotropic strain. due to the large misfit between Pb and Si lattices. (C) 2001 Elsevier Science Ltd. All rights reserved.

  42. Zdyb, R. Strozak, M. Jalochowski, M., Gold-induced faceting on Si(533) surface studied by RHEED, Vacuum, 63(1-2), 2001, 107-112

    Abstract:
    Reflection high energy electron diffraction (RHEED) technique was used to study the Si(5 3 3) surface. On the samples cut 14.42 degrees off the (1 1 1) plane in the [2 (1) over bar (1) over bar] direction, a submonolayer of Au up to 0.628 monolayer (ML) was deposited. Bare Si(5 3 3) surfaces after cleaning in ultrahigh vacuum conditions by short flashing up to about 1500 K did not show a long range older on the macroscopic scale. Upon increasing the coverage of Au, the surface transformed gradually into a flat and perfectly ordered Si(5 3 3) plane at a coverage equal to 0.275 ML, and split into a hill-and-valley structure consisting of (1 1 1) and (1 1 5 5) facets at 0.50 ML of Au, and a combination of (1 1 1) and (3 1 1) facets at 0.628 ML of Au. The crucial role of single atom chains of Au formed on the (1 1 1) terraces is experimentally verified and discussed. It was shown that these chains stabilize the facets and allow the creation of a large macroscopic Si(5 3 3) plane. We suggest that this mechanism can also be operative in the case of Si(1 1 5 5) and Si(3 1 1) planes. (C) 2001 Elsevier Science Ltd. All rights reserved.

  43. Jalochowski, M. Bauer, E., Growth of metallic nanowires on anisotropic Si substrates : Pb on vicinal Si(001), Si(755), Si(533), and Si(110), Surface Science, 480(3), 2001, 109-117

    Abstract:
    The spontaneous formation of mesoscopic Pb-wires, on 4 degrees off-cut Si(0 0 1) vicinal surface, Si(7 5 5), Si(5 3 3), and Si(1 1 0) substrates was studied by low-energy electron microscopy. Before the deposition of Pb the substrates were modified by predeposition of a submonolayer amount of Au followed by annealing. The Au-induced reconstruction creates quasi-one-dimensional facets and superstructures. Their width ranged from several hundred nm in the case of the vicinal Si(0 0 1) down to atomic scale size, for the Si(1 1 0) surface. The best-developed arrays of parallel aligned mesoscopic wires were obtained during the deposition of Pb on substrates cooled slightly below room temperature. Wires with length to width ratio reaching 130 were produced on the Si(7 5 5) and the Si(5 3 3) substrates. The width of these nanowires was uniform over the whole substrate and was about 60 nm. The driving forces for the formation of the mesoscopic wires are the anisotropic strain due to the large misfit between the Pb and the Si lattice and one-dimensional diffusion of Pb. (C) 2001 Elsevier Science B.V. All rights reserved.

  44. Yasue, T. Koshikawa, T. Jalochowski, M. Bauer, E., Dynamic observations of the formation of thin Cu layers on clean and hydrogen-terminated Si(111) surfaces, Surface Science, 480(3), 2001, 118-127

    Abstract:
    The growth of Cu on the clean and hydrogen-terminated Si(1 1 1) surfaces is studied in situ by low-energy electron microscopy (LEEM). The dependence of the growth of the "5 x 5" layer on the clean Si(1 1 1) 7 x 7 surface upon the deposition temperature is investigated by combining LEEM with LEED. After completion of the "5 x 5" layer not only the regular-shaped three-dimensional islands reported before are observed but also irregular shaped more two-dimensional islands. On the hydrogen- terminated Si(1 1 1) surface the formation of the "5 x 5" structure is suppressed and nano-scale islands form preferentially at the step edges and domain boundaries. This is attributed to the enhancement of the surface migration of Cu atoms by the elimination of the surface dangling bonds. (C) 2001 Elsevier Science B.V. All rights reserved.

  45. Koshikawa, T. Yasue, T. Jalochowski, M. Bauer, E., Dynamic LEEM observation of Cu nanostructure formation processes on Si(111) with and without hydrogen, Microbeam Analysis 2000, Proceedings, (), 2000, 259-260

  46. Yasue, T. Koshikawa, T. Jalochowski, M. Bauer, E., Dynamic LEEM observation of Cu nanostructure formation processes on Si(111) with hydrogen, Surface Review and Letters, 7(5-6), 2000, 595-599

    Abstract:
    Dynamic observation of the growth of Cu on dean and hydrogen- terminated Si(111) surfaces was carried out by using low energy electron microscopy (LEEM). On the clean surface, the two- dimensional "5 X 5" structure is formed, and the formation process of the "5 x 5" structure depends on the substrate temperature. Triangular islands are grown on the "5 x 5" structure after further deposition of Cu. On the other hand, the nanoscale islands are directly formed on the hydrogen- terminated surface below about 400 degreesC. Above about 400 degreesC, however, the Cu-induced desorption of hydrogen takes place, and the growth process becomes similar to that on the clean surface.

  47. Jalochowski, M., Self-assembled parallel mesoscopic Pb wires on vicinal Si(III), Acta Physica Polonica A, 98(3), 2000, 259-269

    Abstract:
    The work presents a novel method of production of mesoscopic metallic wires on semiconducting surfaces. Making use the self- assembly phenomenon, arrays of extremely long and perfectly parallel mesoscopic Pb-wires on vicinal Si(111) substrates are formed and studied in UHV conditions. Before deposition of Pb a uniform distribution of monoatomic steps and terraces was induced by formation of Au chains running along step edges. The wires growing on the substrates held at temperatures close to the room temperature reach up to 8 mum length. A reflection high electron energy diffraction experiment shows that the wires laying on Si(533) along the step edges have triangular cross-section determined by (111) and (100) facets of Pb. Scanning tunneling microscopy images collected at low temperatures have enabled us to determine details of the wires shape and morphology of the substrate. The width of the wires was approximately equal to 60 nm whereas their height was about 10 nm. The observed strong growth anisotropy is attributed to step edge barriers and high Pb mobility on the smooth Si(111) narrow terraces that form vicinal surfaces and the anisotropic strain due to large misfit between Pb and Si lattices.

  48. Jalochowski, M. Strozak, M. Zdyb, R., One-dimensional structures on Si(111) observed by RHEED, Thin Solid Films, 306(2), 1997, 224-227

    Abstract:
    A vicinal Si(111) surface covered with a sub-monolayer amount of Au has been studied by reflection high energy electron diffraction (RHEED). At the coverage equal to 0.20 ML of Au, the RHEED pattern showed a reconstruction in the form of regularly distributed monoatomic steps. In order to determine the shape of the surface unit cell, several RHEED patterns obtained within a wide range of the electron incident angle were recorded and analyzed. The surface was composed of flat Si(111) terraces separated by single Si(111) steps. This surface was identified as an ideal Si(755) facet with Au atoms that form quasi-one-dimensional chains running along a Si[1(1) over bar0$] azimuth. Regularly spaced steps were stable within the investigated range of temperatures from 100 to 470 K. (C) 1997 Elsevier Science S.A.

  49. Jalochowski, M. Strozak, M. Zdyb, R., Gold-induced ordering on vicinal Si(111), Surface Science, 375(2-3), 1997, 203-209

    Abstract:
    A vicinal Si(111) surface covered with a sub-monolayer amount of Au has been studied by RHEED. For a sample misoriented by 8.46 degrees towards the [(1) over bar (1) over bar 2] azimuthal direction at a coverage equal to 0.20 ML of Au, the RHEED pattern showed a regular distribution of monoatomic steps with the staircase width equal to 18.88+/-0.33 Angstrom. Au- induced order was identified with a (755) facet of Si. Regularly spaced steps were stable within the investigated range of temperatures from 130 to 470 K. Upon further increase of the Au-coverage the periodicity was disturbed and al a coverage of about 0.50 ML of Au onset of (root 3 x root)R30 degrees reconstruction was visible. (C) 1997 Elsevier Science B.V.

  50. Jalochowski, M. Strozak, M. Zdyb, R., Gold-induced one-dimensional ordering on vicinal Si(111), Vacuum, 48(3-4), 1997, 273-275

    Abstract:
    Behaviour of a sub-monolayer Au-coverage on the vicinal Si(111) has been studied by RHEED. For the sample misoriented by 8.46 degrees towards the [<(11)over bar 2>] azimuthal direction at the coverage equal to 0.20 ML of Au, the RHEED pattern showed almost perfect distribution of the monoatomic Si(111) steps with the staircase width equal to 18.52 +/- 0.66 Angstrom. Au- induced order was identified with the (755) facet of Si with a one-dimensional chains of Au. Upon further increase of the Au deposition this regular distribution was gradually disturbed and at the coverage of about 0.50 ML of Au onset of an (root 3 x root 3)R 30 degrees reconstruction was visible. (C) 1997 Elsevier Science Ltd.

  51. Jalochowski, M. Hoffman, M. Bauer, E., Quantized hall effect in ultrathin metallic films, Physical Review Letters, 76(22), 1996, 4227-4229

    Abstract:
    The Hall coefficient R(H) Of ultrathin epitaxial Pb films is determined experimentally. A comparison with electrical conductivity data leads to the conclusion that the investigated Pb layers behave like a size-quantized metal. Pronounced variations of R(H) With the film thickness were found. The observed reversal of the sign of R(H) is discussed within the available theory of the quantum size effect describing the galvanomagnetic properties of metals. We find that the observed phenomenon cannot be explained by the free electron model of a quantized layer.


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