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Strona główna » Instytut » Pracownicy » Jerzy Żuk

dr hab. Jerzy Żuk

Zakład

Zakład Fizyki Jonów i Implantacji

Stanowisko:

profesor nadzw.

Kontakt:

pokój: 8
telefon: (081) 537-62-09
e-mail: jotzet@hektor.umcs.lublin.pl

Specjalność naukowa:

dośw. fiz. fazy skond.

Funkcje pełnione w IF UMCS:

Kierownik Zakładu

Publikacje: Ukryj abstrakty

  1. O. Yastrubchak,J. Z. Domagala,J. Sadowski,M. Kulik,J. Żuk,A. L. Toth,R. Szymczak,T. Wosiński, Ion-implantation control of ferromagnetism in (Ga; Mn)As epitaxial layers, Journal of Electronic Materials, 39(), 2010, 794-798

  2. M. Majdan,S. Pikus,A. Gajowiak,A. Gładysz-Płaska,H. Krzyżanowska,J. Żuk,M. Bujacka,, Characterization of uranium(VI) sorption by organobentonite, Applied Surface Science, 256(), 2010, 5416-5421

  3. S. Prucnal,M. Turek,A. Droździel,K. Pyszniak,S. Q. Zhou,A. Kanjilal,W. Skorupa,J. Żuk, Formation of InAs quantum dots in silicon by sequential ion implantation and flash lamp annealing, Applied Physics B: Lasers and Optics, 101(), 2010, 315-319

  4. S. Prucnal,M. Turek,A. Droździel,K. Pyszniak,A. Wójtowicz,S+Q. Zhou,A. Kanjilal,A. Shalimov,W. Skorupa,J. Żuk, Optical and microstructural properties of self-assembled InAs quantum structures in silicon, Central European Journal of Physics, DOI: 10.2478/s11534-010-0107-8(), 2010,

  5. J. Żuk, J. Romanek, W. Skorupa, Micro-Raman depth profile investigations of beveled Al+-ion implanted 6H-SiC samples, Nuclear Instruments and Methods in Physics Research B, 267(), 2009, 1251-1254

  6. H. Krzyżanowska, M. Kulik, J. Żuk, W. Rzodkiewicz, A. P. Kobzev, W. Skorupa, Optical investigations of germanium nanoclusters - Rich SiO2 layers produced by ion beam synthesis, Journal of Non-Crystalline Solids, 355(), 2009, 1347-1354

  7. S. Prucnal, A. Wójtowicz, K. Pyszniak, A. Droździel, J. Żuk, M. Turek, L. Rebohle, W. Skorupa, Defect engineering In the MOSLED structure by ion impantation, Nuclear Instruments and Methods in Physics Research B, 267(), 2009, 1311-1313

  8. T. Tsvetskova, P. Sellin, R. Carius, O. Angelov, D. Dimova-Malinowska, J. Żuk, Optical contrast formation in amorphous silicon carbide with high-energy focused ion beams, Nuclear Instruments and Methods in Physics Research B, 267(), 2009, 1583-1587

  9. Żuk, J. Romanek, J. Skorupa, W., Micro-raman depth profile investigations on bevelled Al+ ion implanted 6H-SiC samples,Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 213

  10. Żuk, J. Krzyżanowska, H. Kulik, M. Clouter, M. Rzodkiewicz, W., Elastic characterization of ion implanted layers by Brillouin scattering from surface acoustic waves,Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 254

  11. Żuk, J. Krzyżanowska, H. Kulik, M. Clouter, M. Rzodkiewicz, W., On the use surface Brillouin scattering and ellipsometry for elastic characterization of ion implanted materials, (2008), online, Wisła, Poland, Abstracts of 37-th Winter School on Wave and Quantum Acoustics, (), 2008,

  12. Tsvetkova, T. Balabanov, S. Borisova, E. Avramov, L. Bischoff, L. Żuk, J., Optical properties of Si+ implanted PMMA,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 164

  13. Yastrubchak, O. Domagała, J. Sadowski, J. Kulik, M. Żuk, J. Szymczak, R. Tóth, A. Wosiński, T., Influence of ion implantation on magnetic structural and optical properties of (Ga, Mn)As epitaxial films, Acta Physica Polonica A, 114(), 2008, 1445-1450

  14. Krzyżanowska, H. Bubert, H. Żuk, J. Skorupa, W., Composition of Ge+ and Si+ implanted SiO2 /Si layers: role of oxides in nanocluster formation, Journal of Non-Crystalline Solids, 354(), 2008, 4363-4366

  15. Krzyżanowska, H. Kobzev, A. Żuk, J. Kulik, M., Hydrogen and oxygen concentration analysis of porous silicon, Journal of Non-Crystalline Solids, 354(), 2008, 4367-4374

  16. Kulik, M. Rzodkiewocz, W. Żuk, J. Komarov, F., Spectroscopic elipsometry study of the influence of indium ion implantation on dielectric function of GaAs, Przegląd Elektrotechniczny ISSN 0033-2098, 84(), 2008, 196-199

  17. Kulik, M. Żuk, J. Rzodkiewicz, W. Pyszniak, K. Droździel, A. Turek, M. Prucnal, S. Sochacki, M. Szmidt, J., Badania optyczne politypów 6H-SiC oraz 15R-SiC poddanych wielokrotnej implantacji jonami glinu w podwyższonej temperaturze, Elektronika , (), 2008, 7-8, 15-18

  18. Kulik, M. Rzodkiewicz, W. Żuk, J. Krzyżanowska, H. Kobzev, A. Skorupa, W., Dielectric function of doubly implanted Ge+ - implanted and annealed SiO2 layers,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 31

  19. Krzyżanowska, H. Żuk, J. Filiks, J. Kulik, M. Rzodkiewicz, W., Optical constants of low ion fluence implanted GaAs determined by differential reflectance and spectroscopic ellipsometry,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 93

  20. Kulik, M. Rzodkiewicz, W. Żuk, J. Mączka, D., Optical parameters changes of In+ - implanted and annealed GaAs: spectroscopic ellipsometry study,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 94

  21. Yastrubchak, O. Domagała, J. Sadowski, J. Kulik, M. Żuk, J. Rzodkiewicz, W. Szymczak, R. Wosiński, T., Modification the magnetic, structural and optics properties of (Ga,Mn)As epitaxial films by ion implantation,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 121

  22. Krzyżanowska, H. Kulik, M. Rzodkiewicz, W. Kobzev, A. Skorupa, W. Żuk, J., Optical Investigations of Germanium Nanocluster-rich SiO2 Layers Produced by Ion Beam Synthesis,Ukraine, L`viv, Abstract of the 5-th International Workshop on Functional and Nanostructured Materials, (), 2008, 34

  23. Drabik, M. Dworecki, K. Tanczyk, R. Wasik, S. Zuk, J., Surface modification of PET membrane by ion implantation, Vacuum, 81(10), 2007, 1348-1351

    Abstract:
    Semicrystalline poly(ethylene terephtalate) (PET) foils were irradiated with N5+, O7+ and C3+ ions. Ions beams of 50 keV N5+, 70 keV O7+ and 30 keV C3+ were produced from the ECR ion source. The induced effects and wettability of ion-implanted membranes were investigated by means of the Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM) and by the contactangle methods. FTIR measurements of the virgin and irradiated samples show the scission processes of main chains at the ethylene glycol residue. Various degradation processes known from photochemical degradation were also observed. The AFM observation revealed that the surface topography changes after irradiation. The contact-angle measurements showed that the PET membranes became significantly more hydrophilic after the ion irradiation. (c) 2007 Elsevier Ltd. All rights reserved.

  24. Prucnal, S. Sun, J.M. Reuther, H. Buchal, C. Zuk, J. Skorupa, W., Electronegativity and point defect formation in the ion implanted SiO2 layers, Vacuum, 81(10), 2007, 1296-1300

    Abstract:
    The metal-oxide-silicon (MOS) diode structure containing ion:implanted electropositive:(M+) and electronegative (M-) ions is one of the most promising candidates for a new type of high-efficiency electroluminescence (EL) devices which can be integrated with standard silicon CMOS technology. The implantation process creates defects in the SiO2 layer. After implantation, anannealing process leads to the diffusion of implanted elements and broadening,of the SiO2/Si interface. The influence of different implanted ions (Gd, F, K) was investigated by EL measurements and correlated to different defects in the oxide layer. Implanted electronegative ions (such as F) lead to defects comprising O-2 molecules and peroxy radicals (POR). On the other hand, electropositive ions (Gd and K) increase the number of oxygen vacancy defects. (c) 2007 Published by Elsevier Ltd.

  25. Kulik, M. Kobzev, A.P. Jaworska, D. Żuk, J. Filiks, J., Investigation of indium diffusion process in In+ ion implanted GaAs, Vacuum, 81(10), 2007, 1124-1128

    Abstract:
    Rutherford backscattering (RBS) has been used to determine diffusion coefficients of indium atoms in semi-insulating (10 0) GaAs implanted with 250keV In+ ions at a fluence of 3 x 10(16)cm(-2) and isobarically annealed at 600 and 800 degrees C temperature. Computer modeling of the indium depth profiles based on Ga vacancy-mediated diffusion has shown good agreement with the RBS experimental results. Self-annealing effect was confirmed to play an important role due to high defect mobility at room temperature ion implantation. Large values of the In diffusion coefficients obtained in the present study, in comparison with the literature data for unimplanted GaAs, confirms strong enhancement of the diffusion process by radiation damage. (c) 2007 Elsevier Ltd. All rights reserved.

  26. Michalak, L. Mączka, D. Żuk, J., Special issue - Proceedings of the 6th International Conference on Ion Implantation and other Applications of Ions and Electrons (ION 2006), Vacuum, 81(10), 2007, 1123-1123

  27. Romanek, J. Grambole, D. Herrmann, F. Voelskow, M. Posselt, M. Skorupa, W. Zuk, J., Ion implantation-induced damage depth profile determination in SIC by means of RBS/C and bevelling technique, Nuclear Instruments & Methods in Physics Research Section B- Beam Interactions with Materials and Atoms, 251(1), 2006, 148-156

    Abstract:
    Ion implantation-induced damage depth profiles of 450 keV Al+ ion-implanted 6H-SiC were studied using RBS/C technique for implantations along channeling direction and non-channeling direction with fluence of 3.4 x 10(15) cm(-2). Bevelling method of sample preparation was used to get access to the deeper situated layers over the whole damaged region and below. To determine damage degree at the specific depth of the bevelled sample, RBS/C technique combined with a 3 MeV Li2+ ion beam of size of about 30 mu m x 30 mu m was utilized (micro-RBS/C). The micro-RBS/C method combined with the bevelling technique gave us a possibility to probe deeper reaching damage regions than in the case of conventional RBS/C investigations. It also utilizes a near-surface part of backscattered spectra, which is slightly influenced by damage created by probing ions and a random fraction of probing beam. Additionally, there is no need to perform energy calibration of detector for backscattered particles. Due to much smaller sample area hit by probing ions of micro-beam, the required fluence, comparable to that at conventional RBS/C measurements is obtained at much lower charge. Negligibly small effect of bevelling-induced mechanical damage has been observed in this study. The obtained results by micro-RBS/C method validate the results of computer simulations (Crystal-TRIM software). (c) 2006 Elsevier B.V. All rights reserved.

  28. Michalak, L. Maczka, D. Zuk, J., Proceedings of the Fifth International Conference on Ion Implantation and Other Applications of Ions and Electrons (ION 2004), 14-17 June 2004, Kazimierz Dolny, Poland - Editorial, Vacuum, 78(2-4), 2005, 113-114

  29. Zuk, J. Krzyzanowska, H. Clouter, M. J. Bromberek, M. Bubert, H. Rebohle, L. Skorupa, W., Brillouin scattering and x-ray photoelectron studies of germanium nanoclusters synthesized in SiO2 by ion implantation (vol 96, pg 4952, 2004), Journal of Applied Physics, 97(8), 2005, art. no.-089901

  30. Wiatrowski, A. Boratynski, B. Prucnal, S. Synowiec, Z. Zuk, J., Proton implant isolation in GaN, Vacuum, 78(2-4), 2005, 463-466

    Abstract:
    Proton implantation into GaN epitaxial layers was performed to test its suitability for electrical isolation of devices in monolithic integrated circuits. The experimental samples were unintentionally doped GaN epitaxial layers, 2 mu m thick, grown on a sapphire substrate. The electron concentration was 10(16) cm(-3) resulting in the layer sheet resistance value of 2 x 10(3) Omega. The test structures were circular transmission line model (CTLM) patterns of Ti/Al/Ni/Au ohmic contacts that allowed for measurements of the GaN layer resistivity before and after implantation processes. The metallization provided also a mask for the implanted ions. The implantation processes were performed using multiple energy implants of (270/150/80 keV) steps with doses of (2-5) x 10(12)cm(-2) and (2-5) x 10(13) cm(-2). As a result increase of the GaN layer sheet resistance value by three to four orders of magnitude, to the value of (6-34) x 10(6) Omega was obtained. The post-implanted layer temperature dependence of the resistance measured up to 200 degrees C showed exponential decrease of the sheet resistance with the activation energy, E-a from 350 to 800 meV. After annealing, the sheet resistance measured at room temperature was above the level of 10(6) Omega, which appeared to be sufficient electrical isolation of the device. (c) 2005 Elsevier Ltd. All rights reserved.

  31. Prucnal, S. Cheng, X. Q. Sun, J. M. Kogler, R. Zuk, J. Skorupa, W., Optical and microstructural properties of doubly Ge-Si implanted SiO2 layers, Vacuum, 78(2-4), 2005, 693-697

    Abstract:
    Photoluminescence (PL) properties of 500nm thick SiO2 films on Si substrate subjected to combined Ge-Si implantations have been studied: Sequentially 400keV Ge+ and 200keV Si+ ions were implanted into SiO2 to concentrations of 3% and 1-10%, respectively. As calculated using the SRIM 2000 code, under these conditions depth profiles of implanted species should be contained in the region 100-400nm below the oxide surface. After the implantation, samples were annealed at temperatures ranging from 700 to 1100 degrees C, in order to obtain Si and Ge nanoclusters. A weak near UV luminescence peak at a wavelength of about 315 nm, a strong blue band at 400 nm and a near-infrared 780 nm band were observed for thus prepared samples. The optical emission was stable and reproducible. Diffusion of germanium towards the Si/SiO2 interface during the annealing process is suppressed by silicon ions additionally introduced into SiO2. (c) 2005 Elsevier Ltd. All rights reserved.

  32. Zuk, J. Krzyzanowska, H. Clouter, M. J. Bromberek, M. Bubert, H. Rebohle, L. Skorupa, W., Brillouin scattering and x-ray photoelectron studies of germanium nanoclusters synthesized in SiO2 by ion implantation, Journal of Applied Physics, 96(9), 2004, 4952-4959

    Abstract:
    Brillouin scattering and x-ray photoelectron spectroscopy (XPS) have been utilized to characterize Ge+-implanted thermal SiO2 layers on a Si substrate with subsequent annealing at 500 degreesC and 1100 degreesC. Sputtering depth profiling in conjunction with XPS studies have been applied to identify the chemical state of elemental Ge and GeO2 precipitations in the SiO2 matrices. The presence of a subsurface GeOx zone as predicted in kinetic 3-dimensional lattice simulations has been confirmed. It is concluded that the intermediate step of Ge oxide formation seems necessary for the creation of Ge nanoclusters. The Ge atomic concentrations obtained from XPS were used to compute the bulk and shear moduli, and consequently the surface acoustic wave (SAW) velocities, for the Ge/GeO2/SiO2 systems. These calculations confirm the character of SAW velocity softening as determined from the Brillouin scattering investigations. (C) 2004 American Institute of Physics.

  33. Andrews, G. T. Clouter, M. J. Zuk, J., Brillouin light scattering study of surface acoustic phonons in p(+) porous silicon layers, Semiconductor Science and Technology, 19(11), 2004, 1306-1310

    Abstract:
    Brillouin light scattering experiments were carried out on porous silicon layers fabricated from [111] -oriented p-type crystalline silicon substrates with resistivity 0.01 Omega cm. The thickness and porosity of the layers ranged from 1.6 to 11.40 mum and 0.25 to 0.40, respectively. The only Brillouin peaks evident in the spectra were those due to the Rayleigh surface acoustic phonon. The velocity of this mode was found to be either weakly dispersive or nondispersive for all the samples studied. The porosity dependence of the surface acoustic phonon velocity for the layers of the present work and those of other studies fabricated from p-doped crystalline silicon with resistivity less than or equal to0.01 Omega cm appears to be different from that of porous layers fabricated from p-doped crystalline silicon with resistivity >0.01 Omega cm. The origin of this difference is not completely clear, but it is likely that some of the most significant contributors include dopant-related morphological dissimilarities, rapid air-induced oxidation of porous silicon layers formed from lightly p-doped crystalline silicon compared to layers formed from heavily p-doped crystalline silicon, and/or porosity gradient influence.

  34. Tsvetkova, T. Angelov, O. Sendova-Vassileva, M. Dimova-Malinovska, D. Bischoff, L. Adriaenssens, G. J. Grudzinski, W. Zuk, J., Structural and optical properties modification of a-SiC : H by Ga+ ion implantation, Vacuum, 70(2-3), 2003, 467-470

    Abstract:
    Thin films (dsimilar to200 nm) of hydrogenated amorphous silicon carbide (a-SiC:H), deposited by RF reactive magnetron sputtering, have been ion implanted with high doses (D = 10(16)-10(17) cm(-2)) of Ga+ as the implant species. The increased disorder and additional structural modification of a- SiC:H, induced by the implantation of Ga+, results in a considerable change of the optical properties, best manifested by a significant shift of the optical absorption edge to lower photon energies in the results obtained by optical transmission and reflection measurements and as derived from photo-thermal- deflection spectroscopy results. This shift may be attributed both to additional defect introduction and to accompanying structural modification effects, as confirmed by optical absorption measurements in the infra-red region and by Raman spectroscopy results. (C) 2003 Elsevier Science Ltd. All rights reserved.

  35. Tsvetkova, T. Balabanov, S. Skordeva, E. Kitova, S. Sielanko, J. Maczka, D. Zuk, J., Surface morphology effects of post-implantation annealing in thin amorphous films of the As-Se system, Vacuum, 72(2), 2003, 143-147

    Abstract:
    The effects of ion implantation and subsequent annealing on the surface morphology of thin amorphous chalcogenide films of the As-Se system have been studied. Ion implantation of nitrogen (N+) with an energy E = 100 keV and high doses (typically D = 1.10(16) cm(-2)) has been carried out at room temperature. Subsequent thermal annealing treatments near the melting temperature (T-g similar to 160degreesC) have been performed leading to changes in the thin-film morphology, which are dependent on the As content and are best expressed for the As3Se2 films. Optical microscope photographs reveal details of the rippled surface exhibiting quasi-regular domain-like structure. The parameter lambda, describing it, is dependent on the film thickness and grows with its increase. Thermal annealing near T-g also influences the diffuse optical reflectivity-it increases considerably while the interference features tend to disappear with the appearance of the rippled film surface structure and the effect is again greater for the thicker films. (C) 2003 Published by Elsevier Ltd.

  36. Michalak, L. Maczka, D. Zuk, J., Ion 2002, Vacuum, 70(2-3), 2003, 73-74

  37. Romanek, J. Kobzev, A. P. Kulik, M. Tsvetkova, T. Zuk, J., RBS and optical studies of ion-implanted amorphous silicon carbide layers, Vacuum, 70(2-3), 2003, 457-465

    Abstract:
    Optical properties of ion-implanted a-Si1-xCx:H for x = 0.08 and 0.15 carbon contents have been studied. We investigated the influence of medium (2.5-5 x 10(15) cm(-2), 50 and 150keV Fe+ ions) as well as high fluences (10(16)- 10(17) cm(-2), 45 keV Cu+ ions) implanted into 100 and 200 nm layers of silicon carbide deposited on the c-Si substrates. The optical constants n and k were evaluated by the ellipsometric method. A considerable increase of the extinction coefficient k was noticed for the low-energy implantation into 100 nm layers for both ion fluences. The transmission spectra of a-Si1-xCx:H deposited on the glass substrate indicated the red shift of the absorption edge depending on the implantation fluence. The above-mentioned increase of the k coefficient can be attributed to the growing density of vacancies and the increase of implant atom concentration in the sub-surface layers. This effect of optical contrast formation is already very strong for the samples with the iron atom concentration of 0.7%, as obtained by the RBS analysis. Together with the sub-micron ion-beam techniques, it can be utilized for high-density data recording. (C) 2003 Elsevier Science Ltd. All rights reserved.

  38. Tsvetkova, T. Balabanov, S. Skordeva, E. Kitova, S. Sielanko, J. Maczka, D. Zuk, J., Ion implantation induced surface morphology changes in thin As3Se2 films, Vacuum, 70(2-3), 2003, 471-475

    Abstract:
    Here we present some results of ion implantation and subsequent annealing effects on the surface morphology of thin (dsimilar to1 mum) amorphous As3Se2 films. Ion implantation of nitrogen (N+) with different energies (E = 50, 100 and 150keV) and high doses (typically D = 1.10(16) cm(-2)) has been carried out at room temperature. Subsequent thermal annealing treatments near the melting temperature (T-g similar to 160degreesC) have been performed leading to changes in the thin film morphology and the measured diffuse reflectivity spectra. Optical microscope photographs reveal details of the rippled surface showing quasi-regular domain-like structure. It is described by the parameter lambda, which is dependent on the ion beam energy and grows with its increase. Thermal annealing near T-g also influences the diffuse optical reflectivity-it increases considerably while the interference features tend to disappear with the appearance of the rippled film surface structure and the effect is again greater for the higher energies. (C) 2003 Elsevier Science Ltd. All rights reserved.

  39. Zuk, J. Clouter, M. J. Kulik, M. Romanek, J. Maczka, D., Brillouin scattering study of surface acoustic waves in indium- implanted GaAs, Vacuum, 58(2-3), 2000, 543-550

    Abstract:
    Using high-contrast Brillouin spectroscopy we have investigated surface acoustic waves in supported layers formed on GaAs substrates by 250 keV In+ implantation and subsequent rapid thermal annealing. The angular dispersion of surface acoustic wave velocity in the implanted and annealed layers shows elastic anisotropy characteristic for the (001) planes of the substrate. The values of both Rayleigh and pseudosurface acoustic wave velocities are in reasonable agreement with, but nevertheless consistently lower than, those calculated using the elastic constants of InxGa1-xAs, where the In composition x = 0.2 has been obtained from the Rutherford backscattering measurements. (C) 2000 Elsevier Science Ltd. All rights reserved.

  40. Zuk, J. Krzyzanowska, H. Kulik, M. Liskiewicz, J. Maczka, D. Akimov, A. A. Komarov, F. F., Raman scattering evidence of medium-range order in low fluence Se+-implanted GaAs, Nuclear Instruments & Methods in Physics Research Section B- Beam Interactions with Materials and Atoms, 168(4), 2000, 521-526

    Abstract:
    The effect of growing disorder in the 200 keV Set-implanted GaAs layers has been investigated by Raman scattering for low ion fluences ranging from 1 x 10(12) to 1 x 10(14) cm(-2). We observe a softening and asymmetric broadening of the symmetry- allowed LO phonon line, and the same effect for the TO peak corresponding to the misoriented, recrystallized parts of the implanted material. The average diameters of GaAs nanocrystals were determined using a phonon-confinement model. The presence of the background signal attributed to a boson peak in the Raman spectra indicates that the medium-range order amorphous phase becomes important above the Se+ ion threshold fluence of 8 x 10(12) cm(-2). (C) 2000 Elsevier Science B,V, All rights reserved.

  41. Zuk, J. Kuduk, R., Ion beam induced luminescence of porous silicon: A comparative study, Nukleonika, 44(2), 1999, 335-340

    Abstract:
    Ion beam induced luminescence (ionoluminescence, IL) was studied in situ during 200 keV H+, He+, C+ and O+ ion beam impact on porous Si. Three bands at 1.9, 2.2 and 2.7 eV were observed in the IL spectra for all the ions. The red band at 1.9 eV is attributed to the near-edge recombination of electron-hole pairs confined in Si nanocrystallites of porous Si. The origin of two other bands is linked to the defect centers in SiO2 layers covering the complex structures of porous Si.

  42. Krzyzanowska, H. Kulik, M. Zuk, J., Ellipsometric study of refractive index anisotropy in porous silicon, Journal of Luminescence, 80(1-4), 1998, 183-186

    Abstract:
    Porous Si layers of different thicknesses were prepared by anodising p(+)-type Si substrates with a resistivity of 0.01 Omega cm. The porosity of the samples ranged from 23% to 62%. The refractive index values for the ordinary and extraordinary rays were determined by multiple angle of incidence ellipsometry, from which an optical anisotropy parameter varying from 13% to 20% was obtained. The porous Si layers were modelled as uniaxially anisotropic films on an isotropic substrate, with an optical axis perpendicular to the sample surface. The morphological anisotropy which is typical for the p(+) -type porous Si with a predominating cylindrical geometry is responsible for these optical properties. All the porous Si layers studied were found to be optically negative. (C) 1999 Elsevier Science B.V. All rights reserved.

  43. Zuk, J. Ochalski, T. J. Kulik, M. Liskiewicz, J. Kobzev, A. P., Effect of oxygen implantation on ionoluminescence of porous silicon, Journal of Luminescence, 80(1-4), 1998, 187-192

    Abstract:
    We report on ionoluminescence investigations of porous Si prepared from the p(+)-type Si, which exhibited, after prolonged ambient air exposure, moderate photon emission with a maximum in the red-orange region. In an attempt to activate a shorter wavelength emission, the samples were implanted with 225 keV O+ ions at the dose of I x 10(17) cm(-2) The strong blue band at 2.7 eV, well known in silica, has emerged in the ionoluminescence spectra following the oxygen implantation. The results of the comparative ionoluminescence experiments, performed on both porous Si and two forms of silica, show the important role of SiO2 defect-related states in ion-induced optical emission from porous Si. (C) 1999 Elsevier Science B.V. All rights reserved.

  44. Ochalski, T. J. Zuk, J. Reginski, K. Bugajski, M., Photoreflectance studies of InGaAs/GaAs/AlGaAs single quantum well laser structures, Acta Physica Polonica A, 94(3), 1998, 463-467

    Abstract:
    We report on photoreflectance investigations of strained-layer In0.2Ga0.8As/GaAs/Al0.3Ga0.7As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Delta n = 0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In0.2Ga0.8As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.

  45. Zuk, J. Kulik, M. Andrews, G. T. Kiefte, H. Clouter, M. J. Goulding, R. Rich, N. H. NossarzewskaOrlowska, E., Characterization of porous silicon by Raman scattering and photoluminescence, Thin Solid Films, 297(1-2), 1997, 106-109

    Abstract:
    The structural and light-emitting properties of porous Si prepared from differently doped p-type Si (111) substrates have been studied by Raman scattering and phoioluminescence (PL). A detailed analysis of the Raman line shapes was performed using a quantum phonon confinement model with realistic LO and TO phonon dispersion curves. Prevailing Si nanocrystallite types (spheres or wires) and characteristic sizes were determined for samples with porosities from 30 to 80%, The highly porous samples consist of fine Si spheres, while those of lower porosity are mostly wire-like. The PL spectra are less size- sensitive than the Raman ones and no clear correlation between the structural information from the Raman scattering and the PL has been observed. (C) 1997 Elsevier Science S.A.

  46. Ochalski, T. J. Zuk, J. Vlasukova, L. A., Effect of epitaxial layer thickness on built-in electric field in region of AlGaAs/SI-GaAs interface: A photoreflectance study, Acta Physica Polonica A, 92(5), 1997, 935-939

    Abstract:
    We present a study of detailed line shapes of photoreflectance spectra for Al0.3Ga0.7As/SI-GaAs epitaxial layers grown by MBE. All measurements were performed at 80 K under UHV conditions with a special care for the samples surface quality. A set of the photoreflectance spectra was collected for photon energies close to the GaAs and Al0.3Ga0.7As band gaps (E-0). The photoreflectance spectra originated in the vicinity of the Al0.3Ga0.7As/SI-GaAs interface were analyzed using the complex Airy function model of Franz-Keldysh oscillations. To examine the effect of the epitaxial layer thickness on parameters characterizing the interface, a step-by-step chemical etching was applied for stripping the top layers. The built-in electric field intensity, field inhomogeneity and phenomenological broadening parameter for interface regions were determined as a function of the epilayer thickness. PACS numbers: 78.66.Fd, 78.20.-e.

  47. Andrews, G. T. Zuk, J. Goulding, R. Kiefte, H. Clouter, M. J. Rich, N. H., Raman scattering from a p(+)-type porous silicon layer, Canadian Journal of Physics, 75(7), 1997, 473-476

    Abstract:
    A Raman scattering investigation has been performed on a p(+)- type porous silicon layer using both 488.0 and 514.5 nm Ar+ laser excitations. The Raman spectrum collected using 488.0 nm light exhibits an asymmetrically broadened peak with a lower Raman shift (Delta omega = 514.5 cm(-1)) than that for crystalline silicon (Delta omega = 520.5 cm(-1)) while the 514.5 nm spectrum consists of a sharp peak located at a Raman shift of 521 cm(-1) and a second broad peak at a shift of 517.6 cm(-1). The sharp peak in this spectrum is due to the presence of an Ar+ plasma line at 528.7 nm, which is a coincidence that seems to have gone unnoticed in the literature. The broad asymmetric component of the Raman spectrum excited with 514.5 nm light has a narrower linewidth and larger Raman shift than the corresponding peak in the 488.0 nm spectrum. This suggests that the nanocrystallite size increases with depth.


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