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Strona główna » Instytut » Pracownicy » Mirosław Kulik

dr Mirosław Kulik

Zakład

Zakład Fizyki Jonów i Implantacji

Stanowisko:

adiunkt

Kontakt:

pokój: 42B, 8
telefon: (081) 537-62-86, (081) 537-62-08
e-mail: mkulik@hektor.umcs.lublin.pl

Specjalność naukowa:

fizyka

Publikacje: Pokaż abstrakty

  1. M. Kulik,A. P. Kobzev,A. Misiuk,W. Wierzchowski,K. Wieteska,J. Bak-Misiuk, Composition and structure of czochralski silicon implanted with H+2 and annealed under enhanced hydrostatic pressure, Acta Physica Polonica A, 117(), 2010, 332-335

  2. O. Yastrubchak,J. Z. Domagala,J. Sadowski,M. Kulik,J. Żuk,A. L. Toth,R. Szymczak,T. Wosiński, Ion-implantation control of ferromagnetism in (Ga; Mn)As epitaxial layers, Journal of Electronic Materials, 39(), 2010, 794-798

  3. W. Rzodkiewicz, M. Kulik, K. Pyszniak, A. P. Kobzev, The influence of ion implantation on the optical parameters - refraction and extinction coefficients of the oxygen-enriched layers covering GaAs implanted with indium ions, Acta Physica Polonica A, 116(), 2009, 129 – 132

  4. W. Rzodkiewicz, M. Kulik, E. Papis, A. Szerling, Optical analyses of Si and GaAs semiconductors by fractional-derivative-spectrum methods, Acta Physica Polonica A, 116(), 2009, 95–98

  5. H. Krzyżanowska, M. Kulik, J. Żuk, W. Rzodkiewicz, A. P. Kobzev, W. Skorupa, Optical investigations of germanium nanoclusters - Rich SiO2 layers produced by ion beam synthesis, Journal of Non-Crystalline Solids, 355(), 2009, 1347-1354

  6. Yastrubchak, O. Domagała, J. Sadowski, J. Kulik, M. Żuk, J. Szymczak, R. Tóth, A. Wosiński, T., Influence of ion implantation on magnetic structural and optical properties of (Ga, Mn)As epitaxial films, Acta Physica Polonica A, 114(), 2008, 1445-1450

  7. Kulik, M. Rzodkiewocz, W. Żuk, J. Komarov, F., Spectroscopic elipsometry study of the influence of indium ion implantation on dielectric function of GaAs, Przegląd Elektrotechniczny ISSN 0033-2098, 84(), 2008, 196-199

  8. Kulik, M. Żuk, J. Rzodkiewicz, W. Pyszniak, K. Droździel, A. Turek, M. Prucnal, S. Sochacki, M. Szmidt, J., Badania optyczne politypów 6H-SiC oraz 15R-SiC poddanych wielokrotnej implantacji jonami glinu w podwyższonej temperaturze, Elektronika , (), 2008, 7-8, 15-18

  9. Rzodkiewicz, W. Borowicz, P. Borowicz, L. Guziewicz, M. Kulik, M., Studies of physical properties of MIS structures with aluminium Gate, abstract book Photon 08,UK, Edinburgh, Abstract Book the UK¢s Premier Conference in Optics and Photonics PHOTON08, (), 2008, 36

  10. Kulik, M. Rzodkiewicz, W. Żuk, J. Krzyżanowska, H. Kobzev, A. Skorupa, W., Dielectric function of doubly implanted Ge+ - implanted and annealed SiO2 layers,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 31

  11. Kulik, M. Rzodkiewicz, W. Żuk, J. Mączka, D., Optical parameters changes of In+ - implanted and annealed GaAs: spectroscopic ellipsometry study,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 94

  12. Yastrubchak, O. Domagała, J. Sadowski, J. Kulik, M. Żuk, J. Rzodkiewicz, W. Szymczak, R. Wosiński, T., Modification the magnetic, structural and optics properties of (Ga,Mn)As epitaxial films by ion implantation,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 121

  13. Borowicz, L. Rzodkiewicz, W. Borowicz, P. Kulik, M., Badania własności fizycznych warstwy SiO2 pod bramką aluminiową, Darłowo, Materiały VII Krajowej Konferencji Elektroniki, 1(), 2008, 13-18

  14. Krzyżanowska, H. Kulik, M. Rzodkiewicz, W. Kobzev, A. Skorupa, W. Żuk, J., Optical Investigations of Germanium Nanocluster-rich SiO2 Layers Produced by Ion Beam Synthesis,Ukraine, L`viv, Abstract of the 5-th International Workshop on Functional and Nanostructured Materials, (), 2008, 34

  15. Krzyżanowska, H. Kobzev, A. Żuk, J. Kulik, M., Hydrogen and oxygen concentration analysis of porous silicon, Journal of Non-Crystalline Solids, 354(), 2008, 4367-4374

  16. Żuk, J. Krzyżanowska, H. Kulik, M. Clouter, M. Rzodkiewicz, W., Elastic characterization of ion implanted layers by Brillouin scattering from surface acoustic waves,Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 254

  17. Żuk, J. Krzyżanowska, H. Kulik, M. Clouter, M. Rzodkiewicz, W., On the use surface Brillouin scattering and ellipsometry for elastic characterization of ion implanted materials, (2008), online, Wisła, Poland, Abstracts of 37-th Winter School on Wave and Quantum Acoustics, (), 2008,

  18. Krzyżanowska, H. Żuk, J. Filiks, J. Kulik, M. Rzodkiewicz, W., Optical constants of low ion fluence implanted GaAs determined by differential reflectance and spectroscopic ellipsometry,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 93

  19. Kulik, M. Kobzev, A.P. Jaworska, D. Żuk, J. Filiks, J., Investigation of indium diffusion process in In+ ion implanted GaAs, Vacuum, 81(10), 2007, 1124-1128

  20. Romanek, J. Kobzev, A. P. Kulik, M. Tsvetkova, T. Zuk, J., RBS and optical studies of ion-implanted amorphous silicon carbide layers, Vacuum, 70(2-3), 2003, 457-465

  21. Kulik, M. Komarov, F. F. Maczka, D., RBS and channeling studies of GaAs implanted with In+ ions, Vacuum, 63(4), 2001, 755-759

  22. Kulik, M. Herec, J. Romanek, J., RBS and ellipsometric studies of near surface GaAs ion implanted layers, Vacuum, 63(4), 2001, 761-766

  23. Zuk, J. Clouter, M. J. Kulik, M. Romanek, J. Maczka, D., Brillouin scattering study of surface acoustic waves in indium- implanted GaAs, Vacuum, 58(2-3), 2000, 543-550

  24. Zuk, J. Krzyzanowska, H. Kulik, M. Liskiewicz, J. Maczka, D. Akimov, A. A. Komarov, F. F., Raman scattering evidence of medium-range order in low fluence Se+-implanted GaAs, Nuclear Instruments & Methods in Physics Research Section B- Beam Interactions with Materials and Atoms, 168(4), 2000, 521-526

  25. Kulik, M. Saied, S. O. Liskiewicz, J. Maczka, D., Oxide layers on implanted GaAs surfaces: X-ray-photoelectron spectroscopy and ellipsometry study, Nukleonika, 44(2), 1999, 167-173

  26. Kulik, M. Komarov, F. F. Maczka, D., Effect of thermal annealing on optical properties of implanted GaAs, Acta Physica Polonica A, 96(1), 1999, 131-135

  27. Krzyzanowska, H. Kulik, M. Zuk, J., Ellipsometric study of refractive index anisotropy in porous silicon, Journal of Luminescence, 80(1-4), 1998, 183-186

  28. Zuk, J. Ochalski, T. J. Kulik, M. Liskiewicz, J. Kobzev, A. P., Effect of oxygen implantation on ionoluminescence of porous silicon, Journal of Luminescence, 80(1-4), 1998, 187-192

  29. Zuk, J. Kulik, M. Andrews, G. T. Kiefte, H. Clouter, M. J. Goulding, R. Rich, N. H. NossarzewskaOrlowska, E., Characterization of porous silicon by Raman scattering and photoluminescence, Thin Solid Films, 297(1-2), 1997, 106-109


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