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Strona główna » Instytut » Pracownicy » Jerzy Żuk

dr hab. Jerzy Żuk

Zakład

Zakład Fizyki Jonów i Implantacji

Stanowisko:

profesor nadzw.

Kontakt:

pokój: 8
telefon: (081) 537-62-09
e-mail: jotzet@hektor.umcs.lublin.pl

Specjalność naukowa:

dośw. fiz. fazy skond.

Funkcje pełnione w IF UMCS:

Kierownik Zakładu

Publikacje: Pokaż abstrakty

  1. O. Yastrubchak,J. Z. Domagala,J. Sadowski,M. Kulik,J. Żuk,A. L. Toth,R. Szymczak,T. Wosiński, Ion-implantation control of ferromagnetism in (Ga; Mn)As epitaxial layers, Journal of Electronic Materials, 39(), 2010, 794-798

  2. M. Majdan,S. Pikus,A. Gajowiak,A. Gładysz-Płaska,H. Krzyżanowska,J. Żuk,M. Bujacka,, Characterization of uranium(VI) sorption by organobentonite, Applied Surface Science, 256(), 2010, 5416-5421

  3. S. Prucnal,M. Turek,A. Droździel,K. Pyszniak,S. Q. Zhou,A. Kanjilal,W. Skorupa,J. Żuk, Formation of InAs quantum dots in silicon by sequential ion implantation and flash lamp annealing, Applied Physics B: Lasers and Optics, 101(), 2010, 315-319

  4. S. Prucnal,M. Turek,A. Droździel,K. Pyszniak,A. Wójtowicz,S+Q. Zhou,A. Kanjilal,A. Shalimov,W. Skorupa,J. Żuk, Optical and microstructural properties of self-assembled InAs quantum structures in silicon, Central European Journal of Physics, DOI: 10.2478/s11534-010-0107-8(), 2010,

  5. J. Żuk, J. Romanek, W. Skorupa, Micro-Raman depth profile investigations of beveled Al+-ion implanted 6H-SiC samples, Nuclear Instruments and Methods in Physics Research B, 267(), 2009, 1251-1254

  6. H. Krzyżanowska, M. Kulik, J. Żuk, W. Rzodkiewicz, A. P. Kobzev, W. Skorupa, Optical investigations of germanium nanoclusters - Rich SiO2 layers produced by ion beam synthesis, Journal of Non-Crystalline Solids, 355(), 2009, 1347-1354

  7. S. Prucnal, A. Wójtowicz, K. Pyszniak, A. Droździel, J. Żuk, M. Turek, L. Rebohle, W. Skorupa, Defect engineering In the MOSLED structure by ion impantation, Nuclear Instruments and Methods in Physics Research B, 267(), 2009, 1311-1313

  8. T. Tsvetskova, P. Sellin, R. Carius, O. Angelov, D. Dimova-Malinowska, J. Żuk, Optical contrast formation in amorphous silicon carbide with high-energy focused ion beams, Nuclear Instruments and Methods in Physics Research B, 267(), 2009, 1583-1587

  9. Żuk, J. Romanek, J. Skorupa, W., Micro-raman depth profile investigations on bevelled Al+ ion implanted 6H-SiC samples,Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 213

  10. Żuk, J. Krzyżanowska, H. Kulik, M. Clouter, M. Rzodkiewicz, W., Elastic characterization of ion implanted layers by Brillouin scattering from surface acoustic waves,Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 254

  11. Żuk, J. Krzyżanowska, H. Kulik, M. Clouter, M. Rzodkiewicz, W., On the use surface Brillouin scattering and ellipsometry for elastic characterization of ion implanted materials, (2008), online, Wisła, Poland, Abstracts of 37-th Winter School on Wave and Quantum Acoustics, (), 2008,

  12. Tsvetkova, T. Balabanov, S. Borisova, E. Avramov, L. Bischoff, L. Żuk, J., Optical properties of Si+ implanted PMMA,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 164

  13. Yastrubchak, O. Domagała, J. Sadowski, J. Kulik, M. Żuk, J. Szymczak, R. Tóth, A. Wosiński, T., Influence of ion implantation on magnetic structural and optical properties of (Ga, Mn)As epitaxial films, Acta Physica Polonica A, 114(), 2008, 1445-1450

  14. Krzyżanowska, H. Bubert, H. Żuk, J. Skorupa, W., Composition of Ge+ and Si+ implanted SiO2 /Si layers: role of oxides in nanocluster formation, Journal of Non-Crystalline Solids, 354(), 2008, 4363-4366

  15. Krzyżanowska, H. Kobzev, A. Żuk, J. Kulik, M., Hydrogen and oxygen concentration analysis of porous silicon, Journal of Non-Crystalline Solids, 354(), 2008, 4367-4374

  16. Kulik, M. Rzodkiewocz, W. Żuk, J. Komarov, F., Spectroscopic elipsometry study of the influence of indium ion implantation on dielectric function of GaAs, Przegląd Elektrotechniczny ISSN 0033-2098, 84(), 2008, 196-199

  17. Kulik, M. Żuk, J. Rzodkiewicz, W. Pyszniak, K. Droździel, A. Turek, M. Prucnal, S. Sochacki, M. Szmidt, J., Badania optyczne politypów 6H-SiC oraz 15R-SiC poddanych wielokrotnej implantacji jonami glinu w podwyższonej temperaturze, Elektronika , (), 2008, 7-8, 15-18

  18. Kulik, M. Rzodkiewicz, W. Żuk, J. Krzyżanowska, H. Kobzev, A. Skorupa, W., Dielectric function of doubly implanted Ge+ - implanted and annealed SiO2 layers,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 31

  19. Krzyżanowska, H. Żuk, J. Filiks, J. Kulik, M. Rzodkiewicz, W., Optical constants of low ion fluence implanted GaAs determined by differential reflectance and spectroscopic ellipsometry,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 93

  20. Kulik, M. Rzodkiewicz, W. Żuk, J. Mączka, D., Optical parameters changes of In+ - implanted and annealed GaAs: spectroscopic ellipsometry study,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 94

  21. Yastrubchak, O. Domagała, J. Sadowski, J. Kulik, M. Żuk, J. Rzodkiewicz, W. Szymczak, R. Wosiński, T., Modification the magnetic, structural and optics properties of (Ga,Mn)As epitaxial films by ion implantation,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 121

  22. Krzyżanowska, H. Kulik, M. Rzodkiewicz, W. Kobzev, A. Skorupa, W. Żuk, J., Optical Investigations of Germanium Nanocluster-rich SiO2 Layers Produced by Ion Beam Synthesis,Ukraine, L`viv, Abstract of the 5-th International Workshop on Functional and Nanostructured Materials, (), 2008, 34

  23. Drabik, M. Dworecki, K. Tanczyk, R. Wasik, S. Zuk, J., Surface modification of PET membrane by ion implantation, Vacuum, 81(10), 2007, 1348-1351

  24. Prucnal, S. Sun, J.M. Reuther, H. Buchal, C. Zuk, J. Skorupa, W., Electronegativity and point defect formation in the ion implanted SiO2 layers, Vacuum, 81(10), 2007, 1296-1300

  25. Kulik, M. Kobzev, A.P. Jaworska, D. Żuk, J. Filiks, J., Investigation of indium diffusion process in In+ ion implanted GaAs, Vacuum, 81(10), 2007, 1124-1128

  26. Michalak, L. Mączka, D. Żuk, J., Special issue - Proceedings of the 6th International Conference on Ion Implantation and other Applications of Ions and Electrons (ION 2006), Vacuum, 81(10), 2007, 1123-1123

  27. Romanek, J. Grambole, D. Herrmann, F. Voelskow, M. Posselt, M. Skorupa, W. Zuk, J., Ion implantation-induced damage depth profile determination in SIC by means of RBS/C and bevelling technique, Nuclear Instruments & Methods in Physics Research Section B- Beam Interactions with Materials and Atoms, 251(1), 2006, 148-156

  28. Michalak, L. Maczka, D. Zuk, J., Proceedings of the Fifth International Conference on Ion Implantation and Other Applications of Ions and Electrons (ION 2004), 14-17 June 2004, Kazimierz Dolny, Poland - Editorial, Vacuum, 78(2-4), 2005, 113-114

  29. Zuk, J. Krzyzanowska, H. Clouter, M. J. Bromberek, M. Bubert, H. Rebohle, L. Skorupa, W., Brillouin scattering and x-ray photoelectron studies of germanium nanoclusters synthesized in SiO2 by ion implantation (vol 96, pg 4952, 2004), Journal of Applied Physics, 97(8), 2005, art. no.-089901

  30. Wiatrowski, A. Boratynski, B. Prucnal, S. Synowiec, Z. Zuk, J., Proton implant isolation in GaN, Vacuum, 78(2-4), 2005, 463-466

  31. Prucnal, S. Cheng, X. Q. Sun, J. M. Kogler, R. Zuk, J. Skorupa, W., Optical and microstructural properties of doubly Ge-Si implanted SiO2 layers, Vacuum, 78(2-4), 2005, 693-697

  32. Zuk, J. Krzyzanowska, H. Clouter, M. J. Bromberek, M. Bubert, H. Rebohle, L. Skorupa, W., Brillouin scattering and x-ray photoelectron studies of germanium nanoclusters synthesized in SiO2 by ion implantation, Journal of Applied Physics, 96(9), 2004, 4952-4959

  33. Andrews, G. T. Clouter, M. J. Zuk, J., Brillouin light scattering study of surface acoustic phonons in p(+) porous silicon layers, Semiconductor Science and Technology, 19(11), 2004, 1306-1310

  34. Tsvetkova, T. Angelov, O. Sendova-Vassileva, M. Dimova-Malinovska, D. Bischoff, L. Adriaenssens, G. J. Grudzinski, W. Zuk, J., Structural and optical properties modification of a-SiC : H by Ga+ ion implantation, Vacuum, 70(2-3), 2003, 467-470

  35. Tsvetkova, T. Balabanov, S. Skordeva, E. Kitova, S. Sielanko, J. Maczka, D. Zuk, J., Surface morphology effects of post-implantation annealing in thin amorphous films of the As-Se system, Vacuum, 72(2), 2003, 143-147

  36. Michalak, L. Maczka, D. Zuk, J., Ion 2002, Vacuum, 70(2-3), 2003, 73-74

  37. Romanek, J. Kobzev, A. P. Kulik, M. Tsvetkova, T. Zuk, J., RBS and optical studies of ion-implanted amorphous silicon carbide layers, Vacuum, 70(2-3), 2003, 457-465

  38. Tsvetkova, T. Balabanov, S. Skordeva, E. Kitova, S. Sielanko, J. Maczka, D. Zuk, J., Ion implantation induced surface morphology changes in thin As3Se2 films, Vacuum, 70(2-3), 2003, 471-475

  39. Zuk, J. Clouter, M. J. Kulik, M. Romanek, J. Maczka, D., Brillouin scattering study of surface acoustic waves in indium- implanted GaAs, Vacuum, 58(2-3), 2000, 543-550

  40. Zuk, J. Krzyzanowska, H. Kulik, M. Liskiewicz, J. Maczka, D. Akimov, A. A. Komarov, F. F., Raman scattering evidence of medium-range order in low fluence Se+-implanted GaAs, Nuclear Instruments & Methods in Physics Research Section B- Beam Interactions with Materials and Atoms, 168(4), 2000, 521-526

  41. Zuk, J. Kuduk, R., Ion beam induced luminescence of porous silicon: A comparative study, Nukleonika, 44(2), 1999, 335-340

  42. Krzyzanowska, H. Kulik, M. Zuk, J., Ellipsometric study of refractive index anisotropy in porous silicon, Journal of Luminescence, 80(1-4), 1998, 183-186

  43. Zuk, J. Ochalski, T. J. Kulik, M. Liskiewicz, J. Kobzev, A. P., Effect of oxygen implantation on ionoluminescence of porous silicon, Journal of Luminescence, 80(1-4), 1998, 187-192

  44. Ochalski, T. J. Zuk, J. Reginski, K. Bugajski, M., Photoreflectance studies of InGaAs/GaAs/AlGaAs single quantum well laser structures, Acta Physica Polonica A, 94(3), 1998, 463-467

  45. Zuk, J. Kulik, M. Andrews, G. T. Kiefte, H. Clouter, M. J. Goulding, R. Rich, N. H. NossarzewskaOrlowska, E., Characterization of porous silicon by Raman scattering and photoluminescence, Thin Solid Films, 297(1-2), 1997, 106-109

  46. Ochalski, T. J. Zuk, J. Vlasukova, L. A., Effect of epitaxial layer thickness on built-in electric field in region of AlGaAs/SI-GaAs interface: A photoreflectance study, Acta Physica Polonica A, 92(5), 1997, 935-939

  47. Andrews, G. T. Zuk, J. Goulding, R. Kiefte, H. Clouter, M. J. Rich, N. H., Raman scattering from a p(+)-type porous silicon layer, Canadian Journal of Physics, 75(7), 1997, 473-476


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